參數(shù)資料
型號: M58WR128EBZB
廠商: 意法半導體
英文描述: 128 Mbit 8Mb x 16, Multiple Bank, Burst 1.8V Supply Flash Memory
中文描述: 128兆位和8Mb × 16,多銀行,突發(fā)1.8V電源快閃記憶體
文件頁數(shù): 74/87頁
文件大小: 1113K
代理商: M58WR128EBZB
76/87
Figure 28. Locking Operations Flowchart and Pseudo Code
Note: 1. Any address within the bank can equally be used.
Write
01h, D0h or 2Fh
AI06176b
Read Block
Lock States
YES
NO
Locking
change
confirmed?
Start
Write 60h (1)
locking_operation_command (address, lock_operation) {
writeToFlash (address, 0x60) ; /*configuration setup*/
/* see note (1) */
if (readFlash (address) ! = locking_state_expected)
error_handler () ;
/*Check the locking state (see Read Block Signature table )*/
writeToFlash (address, 0xFF) ; /*Reset to Read Array mode*/
/*see note (1) */
}
Write FFh (1)
Write 90h (1)
End
if (lock_operation==LOCK) /*to protect the block*/
writeToFlash (address, 0x01) ;
else if (lock_operation==UNLOCK) /*to unprotect the block*/
writeToFlash (address, 0xD0) ;
else if (lock_operation==LOCK-DOWN) /*to lock the block*/
writeToFlash (address, 0x2F) ;
writeToFlash (address, 0x90) ;
/*see note (1) */
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