參數(shù)資料
型號： M58WR128EBZB
廠商： 意法半導體
英文描述： 128 Mbit 8Mb x 16, Multiple Bank, Burst 1.8V Supply Flash Memory
中文描述： 128兆位和8Mb × 16，多銀行，突發(fā)1.8V電源快閃記憶體
文件頁數(shù)： 85/87頁
文件大?。?/td> 1113K
代理商： M58WR128EBZB
86/87
REVISION HISTORY
Table 48. Document Revision History
Date
Version
Revision Details
06-Sep-2002
1.0
First Issue
19-Dec-2002
1.1
Device Codes changed. VFBGA60 Package defined. 85ns Speed Class removed,
80ns Speed Class added. 70ns Speed Class characterized (certain timings
modified). Command Interface description of invalid combinations clarified.
WAIT signal’s behavior.
Tables 5, 7, 9 and 10 corrected. Notes to Figures 12, 13 and 14 modified. Flowcharts
and Pseudo Code revised. CFI, Device Geometry Definition table address offsets
35h, 38h reserved. Revision History moved to end of document.
21-May-2003
1.2
Automatic Standby mode explained under Asynchronous Read Mode. Minor text
Bank Erase Command moved from the Standard to the Factory Program
Commands. Number of Bank Erase cycles limited to 100. Erase replaced by Block
Erase in Tables 11 and 12, Dual Operations Allowed in Other Banks and the Same
Bank, respectively.
IPP2 parameter for VPP = VPPH removed from Table 18, DC Characteristics -
Currents. Several cross-references corrected.
VDDQ range split into two in Tables 20 and 21, Asynchronous and Synchronous Read
AC Characteristics: for VDDQ = 2.2V to 3.3V, tAVQV1, tELTV, tEHTZ, tEHQZ, tGLQV, tAVLH,
tELLH and tLLLH in Table 20 and all the timings in Table 21 were modified.
Daisy chain information added (see Figures 20 and 21 and Table 27).
information corrected at offset (P+15)h = 4Eh in Table 40, and at offset (P+38)h =
71h in Table 43.
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相關代理商/技術參數(shù)
參數(shù)描述
M58WR128ET 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:128 Mbit 8Mb x 16, Multiple Bank, Burst 1.8V Supply Flash Memory
M58WR128ET10ZB6T 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:128 Mbit 8Mb x 16, Multiple Bank, Burst 1.8V Supply Flash Memory
M58WR128ET70ZB6T 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:128 Mbit 8Mb x 16, Multiple Bank, Burst 1.8V Supply Flash Memory
M58WR128ET80ZB6T 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:128 Mbit 8Mb x 16, Multiple Bank, Burst 1.8V Supply Flash Memory
M58WR128ETZB 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:128 Mbit 8Mb x 16, Multiple Bank, Burst 1.8V Supply Flash Memory
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