參數(shù)資料
型號： M58WR128EBZB
廠商： 意法半導(dǎo)體
英文描述： 128 Mbit 8Mb x 16, Multiple Bank, Burst 1.8V Supply Flash Memory
中文描述： 128兆位和8Mb × 16，多銀行，突發(fā)1.8V電源快閃記憶體
文件頁數(shù)： 25/87頁
文件大?。?/td> 1113K
代理商： M58WR128EBZB
31/87
Figure 6. X-Latency and Data Output Configuration Example
Figure 7. Wait Configuration Example
AI06182
A22-A0
VALID ADDRESS
K
L
DQ15-DQ0
VALID DATA
X-latency
VALID DATA
tACC
tAVK_CPU
tK
tQVK_CPU
tKQV
1st cycle
2nd cycle
3rd cycle
4th cycle
Note. Settings shown: X-latency = 4, Data Output held for one clock cycle
E
tDELAY
AI06972
A22-A0
VALID ADDRESS
K
L
DQ15-DQ0
VALID DATA
WAIT
CR8 = '0'
CR10 = '0'
WAIT
CR8 = '1'
CR10 = '0'
VALID DATA
NOT VALID
VALID DATA
E
WAIT
CR8 = '0'
CR10 = '1'
WAIT
CR8 = '1'
CR10 = '1'
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
M58WR128ET 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:128 Mbit 8Mb x 16, Multiple Bank, Burst 1.8V Supply Flash Memory
M58WR128ET10ZB6T 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:128 Mbit 8Mb x 16, Multiple Bank, Burst 1.8V Supply Flash Memory
M58WR128ET70ZB6T 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:128 Mbit 8Mb x 16, Multiple Bank, Burst 1.8V Supply Flash Memory
M58WR128ET80ZB6T 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:128 Mbit 8Mb x 16, Multiple Bank, Burst 1.8V Supply Flash Memory
M58WR128ETZB 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:128 Mbit 8Mb x 16, Multiple Bank, Burst 1.8V Supply Flash Memory
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