參數(shù)資料
型號(hào)： M58WR128EBZB
廠商： 意法半導(dǎo)體
英文描述： 128 Mbit 8Mb x 16, Multiple Bank, Burst 1.8V Supply Flash Memory
中文描述： 128兆位和8Mb × 16，多銀行，突發(fā)1.8V電源快閃記憶體
文件頁數(shù)： 30/87頁
文件大?。?/td> 1113K
代理商： M58WR128EBZB
36/87
Table 13. Lock Status
Note: 1. The lock status is defined by the write protect pin and by DQ1 (‘1’ for a locked-down block) and DQ0 (‘1’ for a locked block) as read
in the Read Electronic Signature command with A1 = VIH and A0 = VIL.
2. All blocks are locked at power-up, so the default configuration is 001 or 101 according to WP status.
3. A WP transition to VIH on a locked block will restore the previous DQ0 value, giving a 111 or 110.
Current
Protection Status(1)
(WP, DQ1, DQ0)
Next Protection Status(1)
(WP, DQ1, DQ0)
Current State
Program/Erase
Allowed
After
Block Lock
Command
After
Block Unlock
Command
After Block
Lock-Down
Command
After
WP transition
1,0,0
yes
1,0,1
1,0,0
1,1,1
0,0,0
1,0,1(2)
no
1,0,1
1,0,0
1,1,1
0,0,1
1,1,0
yes
1,1,1
1,1,0
1,1,1
0,1,1
1,1,1
no
1,1,1
1,1,0
1,1,1
0,1,1
0,0,0
yes
0,0,1
0,0,0
0,1,1
1,0,0
0,0,1(2)
no
0,0,1
0,0,0
0,1,1
1,0,1
0,1,1
no
0,1,1
1,1,1 or 1,1,0 (3)
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