參數(shù)資料
型號(hào): M58WR128EBZB
廠商: 意法半導(dǎo)體
英文描述: 128 Mbit 8Mb x 16, Multiple Bank, Burst 1.8V Supply Flash Memory
中文描述: 128兆位和8Mb × 16,多銀行,突發(fā)1.8V電源快閃記憶體
文件頁(yè)數(shù): 42/87頁(yè)
文件大?。?/td> 1113K
代理商: M58WR128EBZB
47/87
Figure 14. Synchronous Burst Read Suspend AC Waveforms
AI08015
DQ0-DQ15
E
G
A0-A22
L
WAIT
(2)
K
(4)
VALID
ADDRESS
tLLLH
tAVLH
tGLQV
tAVKH
tLLKH
tELKH
tKHAX
NOT
VALID
NOT
VALID
Note
1
tEHQX
tEHQZ
tGHQX
tGHQZ
Hi-Z
tELTV
tKHQV
tEHTZ
Note
1.
The
n
umber
of
cloc
k
cycles
to
be
inser
ted
depends
on
the
X
latency
set
in
the
Configur
ation
Register
.
2.
The
W
AIT
signal
is
configured
to
be
activ
e
dur
ing
w
ait
state
.W
AIT
signal
is
activ
e
Lo
w
.
3.
The
CLOCK
signal
can
be
held
high
or
lo
w
4.
Address
latched
and
data
output
on
the
r
ising
cloc
k
edge
.Either
the
r
ising
or
the
f
alling
edge
of
the
cloc
k
signal
,K,
can
be
configured
as
the
activ
e
edge
.
Here
,the
activ
e
edge
is
the
r
ising
one
.
tGLQX
tEHEL
tGHQZ
tGLQV
Note
3
Hi-Z
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