參數(shù)資料
型號(hào): TSPC603R
英文描述: TSPC603R [Updated 4/02. 44 Pages] 32-bit RISC Microprocessor. 166-300 MHz
中文描述: TSPC603R [更新4 / 02。 44頁] 32位RISC微處理器。 166-300兆赫
文件頁數(shù): 11/44頁
文件大?。?/td> 636K
代理商: TSPC603R
11
TSPC603R
2125A
HIREL
04/02
Recommended Operating
Conditions
These are the recommended and tested operating conditions. Proper device operation
outside of these conditions is not guaranteed.
Thermal Characteristics
The data found in this section concerns 603r
s packaged in the 255-lead 21 mm
multi-layer ceramic (MLC), ceramic BGA package. Data is shown for the case of using
the Thermalloy #2328B heat sink.
The internal thermal resistance for this package is negligible due to the exposed die
design. A thermal interface material is recommended at the package lid-to-heat sink
interface to minimize the thermal contact resistance.
Additionally, the CBGA package offers an excellent thermal connection to the card and
power planes. Heat generated at the chip is dissipated through the package, the heat
sink (when used) and the card. The parallel heat flow paths result in the lowest overall
thermal resistance as well as offer significantly better power dissipation capability if a
heat sink is not used.
The thermal characteristics for the flip-chip CBGA and CI-CGA packages are as follows:
Thermal resistance (junction-to-case) = R
jc
or
θ
jc
= 0.095
°
C/Watt for the 2 packages.
Thermal resistance (junction-to-ball) = R
jb
or
θ
jb
= 3.5
°
C/Watt for the CBGA package.
Thermal resistance (junction-to-bottom SCI) = R
js
or
θ
js
= 3.7
°
C/Watt for the CI-CGA package.
The junction temperature can be calculated from the junction to ambient thermal resis-
tance, as follow:
Junction temperature:
T
j =
T
a
+(R
jc
+R
cs
+ R
sa
) * P
T
a
is the ambient temperature in the vicinity
of the device
R
jc
is the die junction-to-case thermal
resistance of the device
R
cs
is the case-to-heat sink thermal
resistance of the interface material
R
sa
is the heat sink-to-ambient
thermal resistance
P is the power dissipated by the device
Where:
During operation, the die-junction temperatures (T
j
) should be maintained less than the
value specified in Table 6.
Table 6.
Recommended Operating Conditions
Parameter
Symbol
Min
Max
Unit
Core Supply Voltage
V
DD
2.375
2.625
V
PLL Supply Voltage
AV
DD
2.375
2.625
V
I/O Supply Voltage
OV
DD
3.135
3.465
V
Input Voltage
V
IN
GND
5.5
V
Operating Temperature
T
c
-55
+125
°
C
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