參數(shù)資料
型號: TSPC603R
英文描述: TSPC603R [Updated 4/02. 44 Pages] 32-bit RISC Microprocessor. 166-300 MHz
中文描述: TSPC603R [更新4 / 02。 44頁] 32位RISC微處理器。 166-300兆赫
文件頁數(shù): 16/44頁
文件大小: 636K
代理商: TSPC603R
16
TSPC603R
2125A
HIREL
04/02
Marking
Each microcircuit is legible and permanently marked with the following information as
minimum:
ATMEL logo
Manufacturer
s part number
Class B identification if applicable
Date-code of inspection lot
ESD identifier if available
Country of manufacturing
Electrical Characteristics
General Requirements
All static and dynamic electrical characteristics specified for inspection purposes and the
relevant measurement conditions are given below:
Table 10: Static electrical characteristics for the electrical variants
Table 11: Dynamic electrical characteristics for the 603r
These specifications are for 166 MHz to 300 MHz processor core frequencies. The pro-
cessor core frequency is determined by the bus (SYSCLK) frequency and the settings of
the PLL_CFG0 to PLL_CFG3 signals. All timings are respectively specified to the rising
edge of SYSCLK.
Static Characteristics
Notes:
1. Excludes test signals (LSSD_MODE, L1_TSTCLK, L2_TSTCLK, and JTAG signals).
2. Capacitance is periodically sampled rather than 100% tested.
3. Leakage currents are measured for nominal OV
DD
and V
DD
or both OV
DD
and V
DD
. Same variation (for example, both V
DD
and OV
DD
vary by either +5% or -5%).
Table 10.
Electrical Characteristics
V
DD
= A
V
DD
= 2.5V ± 5%; O
V
DD
= 3.3 ± 5%V, GND = 0V, -55
°
C
TC
125
°
C
Characteristics
Symbol
Min
Max
Unit
Input High Voltage (all inputs except SYSCLK)
V
IH
2.0
5.5
V
Input Low Voltage (all inputs except SYSCLK)
V
IL
GND
0.8
V
SYSCLK Input High Voltage
CV
IH
2.4
5.5
V
SYSCLK Input Low Voltage
CV
IL
GND
0.4
V
Input Leakage Current
V
IN
= 3.465V
(1)(3)
V
IN
= 5.5V
(1)(3)
V
IN
= 3.465V
(1)(3)
V
IN
= 5.5V
(1)(3)
I
IN
-
30
μA
I
IN
-
300
μA
Hi-Z (off-state)
Leakage Current
I
TSI
-
30
μA
I
TSI
-
300
μA
Output High Voltage
I
OH
= -7 mA
V
OH
2.4
-
V
Output Low Voltage
I
OL
= +7 mA
V
OL
-
0.4
V
Capacitance, V
IN
= 0V, f = 1 MHz
(2)
(excludes TS, ABB, DBB, and ARTRY)
C
IN
-
10.0
pF
Capacitance, V
IN
= 0V, f = 1 MHz
(2)
(for TS, ABB, DBB, and ARTRY)
C
IN
-
15.0
pF
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