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參數(shù)資料
| 型號： | ADSP-21469KBCZ-4 |
| 廠商： | Analog Devices Inc |
| 文件頁數(shù)： | 59/72頁 |
| 文件大小： | 0K |
| 描述： | IC DSP 32/40BIT 450MHZ 324BGA |
| 產(chǎn)品變化通告： | Pin Function Change 08/Mar/2012 |
| 標(biāo)準(zhǔn)包裝： | 1 |
| 系列： | SHARC® |
| 類型： | 浮點 |
| 接口： | DAI，DPI，EBI/EMI，I²C，SCI，SPI，SSP，UART/USART |
| 時鐘速率： | 450MHz |
| 非易失內(nèi)存： | 外部 |
| 芯片上RAM： | 5Mb |
| 電壓 - 輸入/輸出： | 3.30V |
| 電壓 - 核心： | 1.10V |
| 工作溫度： | -40°C ~ 85°C |
| 安裝類型： | 表面貼裝 |
| 封裝/外殼： | 324-BGA，CSPBGA |
| 供應(yīng)商設(shè)備封裝： | 324-CSPBGA |
| 包裝： | 托盤 |
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Rev. 0
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Page 62 of 72
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June 2010
ADSP-21469
Values of JB are provided for package comparison and PCB
design considerations. Note that the thermal characteristics val-
ues provided in Table 56 are modeled values.
Thermal Diode
The ADSP-21469 processors incorporate thermal diodes to
monitor the die temperature. The thermal diode of is a
grounded collector PNP bipolar junction transistor (BJT). The
THD_P pin is connected to the emitter and the THD_M pin is
connected to the base of the transistor. These pins can be used
by an external temperature sensor (such as ADM 1021A or
LM86, or others) to read the die temperature of the chip.
The technique used by the external temperature sensor is to
measure the change in VBE when the thermal diode is operated
at two different currents. This is shown in the following
equation:
where:
n = multiplication factor close to 1, depending on process
variations
k = Boltzmann’s constant
T = temperature (°C)
q = charge of the electron
N = ratio of the two currents
The two currents are usually in the range of 10 μA to 300 μA for
the common temperature sensor chips available.
Table 57 contains the thermal diode specifications using the
transistor model. Note that Measured Ideality Factor already
takes into effect variations in beta ().
Table 56. Thermal Characteristics for 324-Lead CSP_BGA
Parameter
Condition
Typical
Unit
JA
Airflow = 0 m/s
22.7
°C/W
JMA
Airflow = 1 m/s
20.4
°C/W
JMA
Airflow = 2 m/s
19.5
°C/W
JC
6.6
°C/W
JT
Airflow = 0 m/s
0.11
°C/W
JMT
Airflow = 1 m/s
0.19
°C/W
JMT
Airflow = 2 m/s
0.24
°C/W
V
BE
n
kT
q
------
In(N)
=
Table 57. Thermal Diode Parameters—Transistor Model1
Symbol
Parameter
Min
Typ
Max
Unit
IFW
2
Forward Bias Current
10
300
A
IE
Emitter Current
10
300
A
nQ
3, 4
Transistor Ideality
1.012
1.015
1.017
RT
4, 5
Series Resistance
0.12
0.2
0.28
1 See the Engineer-to-Engineer Note EE-346.
2 Analog Devices does not recommend operation of the thermal diode under reverse bias.
3 Not 100% tested. Specified by design characterization.
4 The ideality factor, nQ, represents the deviation from ideal diode behavior as exemplified by the diode equation: IC = IS × (e qVBE/nqkT –1), where IS = saturation current,
q = electronic charge, VBE = voltage across the diode, k = Boltzmann Constant, and T = absolute temperature (Kelvin).
5 The series resistance (RT) can be used for more accurate readings as needed.
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