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參數(shù)資料
| 型號(hào)： | GE28F640W30B85 |
| 英文描述： | EEPROM|FLASH|4MX16|CMOS|BGA|56PIN|PLASTIC |
| 中文描述： | 的EEPROM | FLASH動(dòng)畫(huà)| 4MX16 |的CMOS | BGA封裝| 56PIN |塑料 |
| 文件頁(yè)數(shù)： | 32/91頁(yè) |
| 文件大小： | 994K |
| 代理商： | GE28F640W30B85 |
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1.8 Volt Intel
Wireless Flash Memory with 3 Volt I/O
32
Datasheet
Figure 7. Program Suspend / Resume Flowchart
Read Status
Register
SR[7] =
SR[2] =
Write FFh
Susp Partition
Read Array
Data
Program
Completed
Done
Reading
Write FFh
Pgm'd Partition
Write D0h
Any Address
Program
Resumed
Read Array
Data
0
No
0
Yes
1
1
PROGRAM SUSPEND / RESUME PROCEDURE
Write
Program
Resume
Data = D0h
Addr = any device address
OpBus
Comments
Write
Program
Suspend
Data = B0h
Addr = Any address within programming
partition
Standby
Check SR[7]
1 = WSM ready
0 = WSM busy
Standby
Check SR[2]
1 = Program suspended
0 = Program completed
Write
Read
Array
Data = FFh
Addr = Any device address (except word
being programmed)
Read
Read array data from block other than
the one being programmed
Read
Read SRD
Toggle CE# or OE# to update SRD
Addr = Any address in same partition
Start
Write B0h
Any Address
Write 70h
Same Partition
Write
Read
Status
Data = 70h
Addr = Any address in same partition
If the suspended partition was placed in Read Array mode:
Write
Read
Status
Return partition to status mode:
Data = 70h
Addr = address within same partition
Write 70h
Same Partition
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| GE28F640W30T70 | EEPROM|FLASH|4MX16|CMOS|BGA|56PIN|PLASTIC |
| GE28F640W30T85 | EEPROM|FLASH|4MX16|CMOS|BGA|56PIN|PLASTIC |
| GF4435 | TRANSISTOR | MOSFET | P-CHANNEL | 30V V(BR)DSS | 8A I(D) | SO |
| GF4450 | TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 7.5A I(D) | SO |
| GF4800 | TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 9A I(D) | SO |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| GE28F640W30T70 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:EEPROM|FLASH|4MX16|CMOS|BGA|56PIN|PLASTIC |
| GE28F640W30T85 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:EEPROM|FLASH|4MX16|CMOS|BGA|56PIN|PLASTIC |
| GE28F800B3BA90 | 制造商:Intel 功能描述:NOR Flash, 512K x 16, 45 Pin, Plastic, BGA |
| GE28F800B3TA90 | 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:3 Volt Advanced Boot Block Flash Memory |
| GE28F800C3BA70 | 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:Advanced+ Boot Block Flash Memory (C3) |
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