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參數(shù)資料
| 型號： | GE28F640W30B85 |
| 英文描述： | EEPROM|FLASH|4MX16|CMOS|BGA|56PIN|PLASTIC |
| 中文描述： | 的EEPROM | FLASH動畫| 4MX16 |的CMOS | BGA封裝| 56PIN |塑料 |
| 文件頁數(shù)： | 7/91頁 |
| 文件大?。?/td> | 994K |
| 代理商： | GE28F640W30B85 |
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1.8 Volt Intel
Wireless Flash Memory with 3 Volt I/O
Datasheet
7
1.0
Introduction
1.1
Document Purpose
This datasheet contains information about the 1.8 Volt Intel
Wireless Flash memory with
3 Volt I/O family. Section 1.0 provides a flash memory overview.
Section 2.0
through
Section 9.0
describe the memory functionality.
Section 10.0
describes the electrical specifications for extended
temperature product offerings. Packaging specifications and order information can be found in
Appendix C
and
Appendix D
, respectively.
1.2
Nomenclature
Many acronyms that describe product features or usage are defined here:
APS
Automatic Power Savings
BBA
Block Base Address
CFI
Common Flash Interface
CUI
Command User Interface
EFP
Enhanced Factory Programming
FDI
Flash Data Integrator
NC
No Connect
OTP
One-Time Programmable
PBA
Partition Base Address
RWE
Read-While-Erase
RWW
Read-While-Write
SRD
Status Register Data
VF BGA
Very thin, Fine pitch, Ball Grid Array
WSM
Write State Machine
1.3
Conventions
Many abbreviated terms and phrases are used throughout this document:
The term “1.8 V” refers to the full VCC voltage range of 1.7 V – 1.95 V (except where noted)
and “V
PP
= 12 V” refers to 12 V ±5%.
When referring to registers, the term
set
means the bit is a logical 1, and
clear
means the bit is
a logical 0.
The terms
pin
and
signal
are often used interchangeably to refer to the external signal
connections on the package. (
ball
is the term used for VF BGA).
A
word
is 2 bytes, or 16 bits.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| GE28F640W30T70 | EEPROM|FLASH|4MX16|CMOS|BGA|56PIN|PLASTIC |
| GE28F640W30T85 | EEPROM|FLASH|4MX16|CMOS|BGA|56PIN|PLASTIC |
| GF4435 | TRANSISTOR | MOSFET | P-CHANNEL | 30V V(BR)DSS | 8A I(D) | SO |
| GF4450 | TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 7.5A I(D) | SO |
| GF4800 | TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 9A I(D) | SO |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| GE28F640W30T70 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:EEPROM|FLASH|4MX16|CMOS|BGA|56PIN|PLASTIC |
| GE28F640W30T85 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:EEPROM|FLASH|4MX16|CMOS|BGA|56PIN|PLASTIC |
| GE28F800B3BA90 | 制造商:Intel 功能描述:NOR Flash, 512K x 16, 45 Pin, Plastic, BGA |
| GE28F800B3TA90 | 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:3 Volt Advanced Boot Block Flash Memory |
| GE28F800C3BA70 | 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:Advanced+ Boot Block Flash Memory (C3) |
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