參數(shù)資料
型號(hào)： GE28F640W30B85
英文描述： EEPROM|FLASH|4MX16|CMOS|BGA|56PIN|PLASTIC
中文描述： 的EEPROM | FLASH動(dòng)畫| 4MX16 |的CMOS | BGA封裝| 56PIN |塑料
文件頁數(shù)： 87/91頁
文件大?。?/td> 994K
代理商： GE28F640W30B85
1.8 Volt Intel
Wireless Flash Memory with 3 Volt I/O
Datasheet
87
Partition Region 2 Information
Offset
(1)
P = 39h
Bottom
Top
(P+30)h
(P+28)h Number of identical partitions within the partition region
(P+31)h
(P+29)h
(P+32)h
(P+2A)h
Number of program or erase operations allowed in a partition
bits 0–3 = number of simultaneous Program operations
bits 4–7 = number of simultaneous Erase operations
See table below
Address
Len
Bot
2
69:
6A:
1
6B:
Description
(Optional flash features and commands)
Top
61:
62:
63:
(P+33)h
(P+2B)h
1
6C:
64:
(P+34)h
(P+2C)h
1
6D:
65:
(P+35)h
(P+2D)h
1
6E:
66:
(P+36)h
(P+37)h
(P+38)h
(P+39)h
(P+3A)h
(P+3B)h
(P+3C)h
(P+2E)h Partition Region 2 Erase Block Type 1 Information
(P+2F)h
bits 0–15 = y, y+1 = number of identical-size erase blocks
(P+30)h
bits 16–31 = z, region erase block(s) size are z x 256 bytes
(P+31)h
(P+32)h Partition 2 (Erase block Type 1)
(P+33)h
Minimum block erase cycles x 1000
(P+34)h
Partition 2 (Erase block Type 1) bits per cell
bits 0–3 = bits per cell in erase region
bit 4 = reserved for “internal ECC used” (1=yes, 0=no)
bits 5–7 = reserve for future use
Partition 2 (erase block Type 1) pagemode and synchronous
mode capabilities as defined in Table 10.
bit 0 = page-mode host reads permitted (1=yes, 0=no)
bit 1 = synchronous host reads permitted (1=yes, 0=no)
bit 2 = synchronous host writes permitted (1=yes, 0=no)
bits 3–7 = reserved for future use
4
6F:
70:
71:
72:
73:
74:
75:
67:
68:
69:
6A:
6B:
6C:
6D:
2
1
(P+3D)h
(P+35)h
1
76:
6E:
(P+36)h Partition Region 2 Erase Block Type 2 Information
(P+37)h
bits 0–15 = y, y+1 = number of identical-size erase blocks
(P+38)h
bits 16–31 = z, region erase block(s) size are z x 256 bytes
(P+39)h
(P+3A)h Partition 2 (Erase Block Type 2)
(P+3B)h
Minimum block erase cycles x 1000
(P+3C)h
Partition 2 (Erase Block Type 2) bits per cell
bits 0–3 = bits per cell in erase region
bit 4 = reserved for “internal ECC used” (1=yes, 0=no)
bits 5–7 = reserved for future use
Partition 2 (Erase block Type 2) pagemode and synchronous
mode capabilities as defined in Table 10.
bit 0 = page-mode host reads permitted (1=yes, 0=no)
bit 1 = synchronous host reads permitted (1=yes, 0=no)
bit 2 = synchronous host writes permitted (1=yes, 0=no)
bits 3–7 = reserved for future use
4
6F:
70:
71:
72:
73:
74:
75:
2
1
(P+3D)h
1
76:
(P+3E)h
(P+3F)h
(P+3E)h Features Space definitions (Reserved for future use)
(P+3F)h Reserved for future use
TBD
Resv'd
77:
78:
77:
78:
Simultaneous program or erase operations allowed in other
partitions while a partition in this region is in Erase mode
bits 0–3 = number of simultaneous Program operations
bits 4–7 = number of simultaneous Erase operations
Types of erase block regions in this Partition Region.
x = 0 = no erase blocking; the Partition Region erases in bulk
x = number of erase block regions w/ contiguous same-size
erase blocks. Symmetrically blocked partitions have one
blocking region. Partition size = (Type 1 blocks)x(Type 1
block sizes) + (Type 2 blocks)x(Type 2 block sizes) +…+
(Type n blocks)x(Type n block sizes)
Simultaneous program or erase operations allowed in other
partitions while a partition in this region is in Program mode
bits 0–3 = number of simultaneous Program operations
bits 4–7 = number of simultaneous Erase operations
相關(guān)PDF資料
PDF描述
GE28F640W30T70 EEPROM|FLASH|4MX16|CMOS|BGA|56PIN|PLASTIC
GE28F640W30T85 EEPROM|FLASH|4MX16|CMOS|BGA|56PIN|PLASTIC
GF4435 TRANSISTOR | MOSFET | P-CHANNEL | 30V V(BR)DSS | 8A I(D) | SO
GF4450 TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 7.5A I(D) | SO
GF4800 TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 9A I(D) | SO
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
GE28F640W30T70 制造商:未知廠家 制造商全稱:未知廠家 功能描述:EEPROM|FLASH|4MX16|CMOS|BGA|56PIN|PLASTIC
GE28F640W30T85 制造商:未知廠家 制造商全稱:未知廠家 功能描述:EEPROM|FLASH|4MX16|CMOS|BGA|56PIN|PLASTIC
GE28F800B3BA90 制造商:Intel 功能描述:NOR Flash, 512K x 16, 45 Pin, Plastic, BGA
GE28F800B3TA90 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:3 Volt Advanced Boot Block Flash Memory
GE28F800C3BA70 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:Advanced+ Boot Block Flash Memory (C3)
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