參數(shù)資料
型號： GE28F640W30B85
英文描述： EEPROM|FLASH|4MX16|CMOS|BGA|56PIN|PLASTIC
中文描述： 的EEPROM | FLASH動畫| 4MX16 |的CMOS | BGA封裝| 56PIN |塑料
文件頁數(shù)： 80/91頁
文件大?。?/td> 994K
代理商： GE28F640W30B85
1.8 Volt Intel
Wireless Flash Memory with 3 Volt I/O
80
Datasheet
Appendix B Common Flash Interface
This appendix defines the data structure or “database” returned by the Common Flash Interface
(CFI) Query command. System software should parse this structure to gain critical information
such as block size, density, x8/x16, and electrical specifications. Once this information has been
obtained, the software will know which command sets to use to enable flash writes, block erases,
and otherwise control the flash component. The Query is part of an overall specification for
multiple command set and control interface descriptions called Common Flash Interface, or CFI.
B.1
Query Structure Output
The Query database allows system software to obtain information for controlling the flash device.
This section describes the device’s CFI-compliant interface that allows access to Query data.
Query data are presented on the lowest-order data outputs (DQ0-7) only. The numerical offset
value is the address relative to the maximum bus width supported by the device. On this family of
devices, the Query table device starting address is a 10h, which is a word address for x16 devices.
For a word-wide (x16) device, the first two Query-structure bytes, ASCII “Q” and “R,” appear on
the low byte at word addresses 10h and 11h. This CFI-compliant device outputs 00h data on upper
bytes. The device outputs ASCII “Q” in the low byte (DQ
0-7
) and 00h in the high byte (DQ
8-15
).
At Query addresses containing two or more bytes of information, the least significant data byte is
presented at the lower address, and the most significant data byte is presented at the higher address.
In all of the following tables, addresses and data are represented in hexadecimal notation, so the
“h” suffix has been dropped. In addition, since the upper byte of word-wide devices is always
“00h,” the leading “00” has been dropped from the table notation and only the lower byte value is
shown. Any x16 device outputs can be assumed to have 00h on the upper byte in this mode.
Table 26. Summary of Query Structure Output as a Function of Device and Mode
Table 27. Example of Query Structure Output of x16- and x8 Devices
Device
Hex
Offset
00010:
00011:
00012:
Hex
Code
51
52
59
ASCII
Value
"Q"
"R"
"Y"
Device Addresses
Word Addressing:
Hex Code
Byte Addressing:
Hex Code
Offset
A
X
–A
0
00010h
00011h
00012h
00013h
00014h
00015h
00016h
00017h
00018h
...
Value
Offset
A
X
–A
0
00010h
00011h
00012h
00013h
00014h
00015h
00016h
00017h
00018h
...
Value
D
15
–D
0
D
7
–D
0
0051
0052
0059
P_ID
LO
P_ID
HI
P
LO
P
HI
A_ID
LO
A_ID
HI
...
"Q"
"R"
"Y"
51
52
59
"Q"
"R"
"Y"
PrVendor
ID #
PrVendor
TblAdr
AltVendor
ID #
...
P_ID
LO
P_ID
LO
P_ID
HI
...
PrVendor
ID #
ID #
...
相關(guān)PDF資料
PDF描述
GE28F640W30T70 EEPROM|FLASH|4MX16|CMOS|BGA|56PIN|PLASTIC
GE28F640W30T85 EEPROM|FLASH|4MX16|CMOS|BGA|56PIN|PLASTIC
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
GE28F640W30T70 制造商:未知廠家 制造商全稱:未知廠家 功能描述:EEPROM|FLASH|4MX16|CMOS|BGA|56PIN|PLASTIC
GE28F640W30T85 制造商:未知廠家 制造商全稱:未知廠家 功能描述:EEPROM|FLASH|4MX16|CMOS|BGA|56PIN|PLASTIC
GE28F800B3BA90 制造商:Intel 功能描述:NOR Flash, 512K x 16, 45 Pin, Plastic, BGA
GE28F800B3TA90 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:3 Volt Advanced Boot Block Flash Memory
GE28F800C3BA70 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:Advanced+ Boot Block Flash Memory (C3)
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