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參數(shù)資料
| 型號(hào)： | GE28F640W30B85 |
| 英文描述： | EEPROM|FLASH|4MX16|CMOS|BGA|56PIN|PLASTIC |
| 中文描述： | 的EEPROM | FLASH動(dòng)畫| 4MX16 |的CMOS | BGA封裝| 56PIN |塑料 |
| 文件頁(yè)數(shù)： | 41/91頁(yè) |
| 文件大?。?/td> | 994K |
| 代理商： | GE28F640W30B85 |
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1.8 Volt Intel
Wireless Flash Memory with 3 Volt I/O
Datasheet
41
7.2.3
Locking the Protection Register
PR-LK.0 is programmed to 0 by Intel to protect the unique device number. PR-LK.1 can be
programmed by the user to lock the user portion (upper 64 bits) of the protection register (See
Figure 13, “Protection Register Locking
). This bit is set using the Protection Program command to
program “FFFDh” into PR-LK.
After PR-LK register bits are programmed (locked), the protection register’s stored values can’t be
changed. Protection Program commands written to a locked section result in a status register error
(SR[4]=1, SR[5]=1).
Figure 12. Protection Register Programming Flowchart
FULL STATUS CHECK PROCEDURE
Protection Program operations addresses must be within the
protection register address space. Addresses outside this
space will return an error.
Repeat for subsequent programming operations.
Full status register check can be done after each program or
after a sequence of program operations.
SR[3] MUST be cleared before the WSM will allow further
program attempts.
Only the Clear Staus Register command clears SR[4:3,1].
If an error is detected, clear the status register before
attempting a program retry or other error recovery.
Yes
No
1,1
1,0
1,1
PROTECTION REGISTER PROGRAMMINGPROCEDURE
Start
Write C0h
Addr=Prot addr
Write Protect.
Register
Address / Data
Read Status
Register
SR[7] = 1
Full Status
Check
(if desired)
Program
Complete
Read SRD
Program
Successful
SR[4:3] =
SR[4,1] =
SR[4,1] =
V
PP
Range Error
Programming Error
Locked-Register
Program Aborted
Standby
Standby
OpBus
SR[1] SR[3] SR[4]
0
1
1
V
PP
Error
0
0
1
Protection register
program error
Comments
Write
Write
Standby
Protection
Program
Setup
Protection
Program
Data = C0h
Addr = Protection address
Data = Data to program
Addr = Protection address
Check SR[7]
1 = WSM Ready
0 = WSM Busy
OpBus
Comments
Read
Read SRD
Toggle CE# or OE# to update SRD
Standby
1
0
1
Register locked;
Operation aborted
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PDF描述 |
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| GE28F640W30T70 | EEPROM|FLASH|4MX16|CMOS|BGA|56PIN|PLASTIC |
| GE28F640W30T85 | EEPROM|FLASH|4MX16|CMOS|BGA|56PIN|PLASTIC |
| GF4435 | TRANSISTOR | MOSFET | P-CHANNEL | 30V V(BR)DSS | 8A I(D) | SO |
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| GF4800 | TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 9A I(D) | SO |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
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| GE28F640W30T70 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:EEPROM|FLASH|4MX16|CMOS|BGA|56PIN|PLASTIC |
| GE28F640W30T85 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:EEPROM|FLASH|4MX16|CMOS|BGA|56PIN|PLASTIC |
| GE28F800B3BA90 | 制造商:Intel 功能描述:NOR Flash, 512K x 16, 45 Pin, Plastic, BGA |
| GE28F800B3TA90 | 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:3 Volt Advanced Boot Block Flash Memory |
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