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參數(shù)資料
| 型號： | GE28F640W30B85 |
| 英文描述： | EEPROM|FLASH|4MX16|CMOS|BGA|56PIN|PLASTIC |
| 中文描述： | 的EEPROM | FLASH動畫| 4MX16 |的CMOS | BGA封裝| 56PIN |塑料 |
| 文件頁數(shù)： | 52/91頁 |
| 文件大?。?/td> | 994K |
| 代理商： | GE28F640W30B85 |
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1.8 Volt Intel
Wireless Flash Memory with 3 Volt I/O
52
Datasheet
processor reads word 2, and possibly again, depending on system timing, near the end of the
sequence as the device pipelines the next 4-word sequence. CR[3]=1 while in 4-word burst mode
(no-wrap mode) reduces this excess power consumption.
8.10
Burst Length (CR[2:0])
The burst length is the number of words the device outputs in a synchronous read access. 4-, 8-,
16-, and continuous-word are supported. In 4-, 8-, or 16-word burst configuration, the burst wrap
bit (CR[3]) determines if burst accesses wrap within word-length boundaries or whether they cross
word-length boundaries to perform a linear access. Once an address is given, the device outputs
data until it reaches the end of its burstable address space. Continuous burst accesses are linear only
(burst wrap bit CR[3] is ignored during continuous burst) and do not wrap within word-length
boundaries (see
Table 16, “Sequence and Burst Length” on page 50
).
9.0
Power Consumption
1.8 Volt Intel
Wireless Flash memory with devices have a layered approach to power savings that
can significantly reduce overall system power consumption. The APS feature reduces power
consumption when the device is selected but idle. If CE# is deasserted, the memory enters its
standby mode, where current consumption is even lower. Asserting RST# provides current savings
similar to standby mode. The combination of these features can minimize memory power
consumption, and therefore, overall system power consumption.
9.1
Active Power
With CE# at V
IL
and RST# at V
IH
, the device is in the active mode. Refer to
Section 10.3, “DC
Current Characteristics” on page 56
, for I
CC
values. When the device is in “active” state, it
consumes the most power from the system. Minimizing device active current therefore reduces
system power consumption, especially in battery-powered applications.
9.2
Automatic Power Savings (APS)
Automatic Power Saving (APS) provides low
-
power operation during a read’s active state. During
APS mode, I
CCAPS
is the average current measured over any 5 ms time interval 5 μs after the
following events happen:
There is no internal sense activity;
CE# is asserted;
The address lines are quiescent, and at V
SSQ
or V
CCQ
.
OE# may be asserted during APS.
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相關(guān)代理商/技術(shù)參數(shù) |
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| GE28F640W30T70 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:EEPROM|FLASH|4MX16|CMOS|BGA|56PIN|PLASTIC |
| GE28F640W30T85 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:EEPROM|FLASH|4MX16|CMOS|BGA|56PIN|PLASTIC |
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| GE28F800B3TA90 | 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:3 Volt Advanced Boot Block Flash Memory |
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