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參數(shù)資料
| 型號(hào)： | GE28F640W30B85 |
| 英文描述： | EEPROM|FLASH|4MX16|CMOS|BGA|56PIN|PLASTIC |
| 中文描述： | 的EEPROM | FLASH動(dòng)畫(huà)| 4MX16 |的CMOS | BGA封裝| 56PIN |塑料 |
| 文件頁(yè)數(shù)： | 70/91頁(yè) |
| 文件大?。?/td> | 994K |
| 代理商： | GE28F640W30B85 |
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1.8 Volt Intel
Wireless Flash Memory with 3 Volt I/O
70
Datasheet
6. System designers should take this into account and may insert a software No-Op instruction to delay the first
read after issuing a command.
7. For commands other than resume commands.
8. V
should be held at V
or V
until block erase or program success is determined.
9. Applicable during asynchronous reads following a write.
10.t
WHCH/L
OR t
must be met when transitioning from a write cycle to a synchronous burst read. t
and
t
both refer to the address latching event (either the rising/falling clock edge or the rising ADV# edge,
whichever occurs first).
NOTES:
NOTES:
1. V
power-up and standby.
2. Write Program or Erase Setup command.
3. Write valid address and data (for program) or Erase Confirm command.
4. Automated program/erase delay.
5. Read status register data (SRD) to determine program/erase operation completion.
6. OE# and CE# must be asserted and WE# must be deasserted for read operations.
7. CLK is ignored. (but may be kept active/toggling)
Figure 27. Write Operations Waveform
Note 1
Note 2
Note 3
Note 4
Note 5
Address [A]
V
IH
V
IL
Valid
Address
Valid
Address
CE# (WE#) [E(W)]
V
IH
V
IL
Note 6
OE# [G]
V
IH
V
IL
WE# (CE#) [W(E)]
V
IH
V
IL
RST# [P]
V
IH
V
IL
W6
W7
W8
W11
W12
R105
VPP [V]
V
PPH
V
PPLK
V
IL
WP# [B]
V
IH
V
IL
Data [Q]
V
IH
V
IL
Data In
Valid
SRD
ADV# [V]
V
IH
V
IL
W16
W1
W2
W3
W4
W9
W10
W13
W14
R101
R106
Data In
Valid
Address
Note 6
R104
W5
W18
W19
W20
CLK [C]
V
IH
V
IL
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| GE28F640W30T70 | EEPROM|FLASH|4MX16|CMOS|BGA|56PIN|PLASTIC |
| GE28F640W30T85 | EEPROM|FLASH|4MX16|CMOS|BGA|56PIN|PLASTIC |
| GF4435 | TRANSISTOR | MOSFET | P-CHANNEL | 30V V(BR)DSS | 8A I(D) | SO |
| GF4450 | TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 7.5A I(D) | SO |
| GF4800 | TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 9A I(D) | SO |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| GE28F640W30T70 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:EEPROM|FLASH|4MX16|CMOS|BGA|56PIN|PLASTIC |
| GE28F640W30T85 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:EEPROM|FLASH|4MX16|CMOS|BGA|56PIN|PLASTIC |
| GE28F800B3BA90 | 制造商:Intel 功能描述:NOR Flash, 512K x 16, 45 Pin, Plastic, BGA |
| GE28F800B3TA90 | 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:3 Volt Advanced Boot Block Flash Memory |
| GE28F800C3BA70 | 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:Advanced+ Boot Block Flash Memory (C3) |
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