參數(shù)資料
型號(hào): GE28F640W30B85
英文描述: EEPROM|FLASH|4MX16|CMOS|BGA|56PIN|PLASTIC
中文描述: 的EEPROM | FLASH動(dòng)畫| 4MX16 |的CMOS | BGA封裝| 56PIN |塑料
文件頁(yè)數(shù): 43/91頁(yè)
文件大?。?/td> 994K
代理商: GE28F640W30B85
1.8 Volt Intel
Wireless Flash Memory with 3 Volt I/O
Datasheet
43
8.0
Set Configuration Register
The Set Configuration Register command sets the burst order, frequency configuration, burst
length, and other parameters.
A two-bus cycle command sequence initiates this operation. The configuration register data is
placed on the lower 16 bits of the address bus (A[15:0]) during both bus cycles. The Set
Configuration Register command is written along with the configuration data (on the address bus).
This is followed by a second write that confirms the operation and again presents the configuration
register data on the address bus. The configuration register data is latched on the rising edge of
ADV#, CE#, or WE# (whichever occurs first). This command functions independently of the
applied V
PP
voltage. After executing this command, the device returns to read-array mode. The
configuration register’s contents can be examined by writing the Read Identifier command and
then reading location 05h. (See
Table 13
and
Table 14
.)
相關(guān)PDF資料
PDF描述
GE28F640W30T70 EEPROM|FLASH|4MX16|CMOS|BGA|56PIN|PLASTIC
GE28F640W30T85 EEPROM|FLASH|4MX16|CMOS|BGA|56PIN|PLASTIC
GF4435 TRANSISTOR | MOSFET | P-CHANNEL | 30V V(BR)DSS | 8A I(D) | SO
GF4450 TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 7.5A I(D) | SO
GF4800 TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 9A I(D) | SO
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
GE28F640W30T70 制造商:未知廠家 制造商全稱:未知廠家 功能描述:EEPROM|FLASH|4MX16|CMOS|BGA|56PIN|PLASTIC
GE28F640W30T85 制造商:未知廠家 制造商全稱:未知廠家 功能描述:EEPROM|FLASH|4MX16|CMOS|BGA|56PIN|PLASTIC
GE28F800B3BA90 制造商:Intel 功能描述:NOR Flash, 512K x 16, 45 Pin, Plastic, BGA
GE28F800B3TA90 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:3 Volt Advanced Boot Block Flash Memory
GE28F800C3BA70 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:Advanced+ Boot Block Flash Memory (C3)