1038
SAM4CP [DATASHEET]
43051E–ATPL–08/14
45.6
Embedded Flash Characteristics
45.6.1
Embedded Flash DC Characteristics
45.6.2 Embedded Flash AC Characteristics
45.6.2.1 Flash Wait States and Operating Frequency
The maximum operating frequency given in
Table 45-43
below is limited by the Embedded Flash access time when the
processor is fetching code out of it. The table give the device maximum operating frequency depending on the FWS field
of the EFC_FMR register. This field defines the number of wait states required to access the Embedded Flash Memory.
Table 45-41. DC Flash Characteristics
Symbol
Parameter
Conditions
Random 128-bit Read:
Maximum Read Frequency onto VDDCORE = 1.2V @ 25°C
Maximum Read Frequency onto VDDIO = 3.3V @ 25°C
Random 64-bit Read:
Maximum Read Frequency onto VDDCORE = 1.2V @ 25°C
Maximum Read Frequency onto VDDIO = 3.3V @ 25°C
Program:
- Onto VDDCORE = 1.2V @ 25°C
- Onto VDDIO = 3.3V @ 25°C
Erase:
- Onto VDDCORE = 1.2V @ 25°C
- Onto VDDIO = 3.3V @ 25°C
Typ
Max
Unit
I
CC
Active current
16
3
25
5
mA
10
3
18
5
3
10
5
15
mA
3
10
5
15
mA
Table 45-42. AC Flash Characteristics
Parameter
Conditions
Write page (512Bytes)
Erase Page
Erase Block (4 Kbytes)
Erase Sector
Full Chip Erase (1 MByte)
Lock/Unlock Time per region
Not Powered or Powered
Write/Erase cycles per page, block or
sector @ 85°C
Min
—
—
—
—
—
—
—
Typ
1.5
10
50
400
9
1.5
20
Max
3
50
200
950
18
3
—
Unit
ms
ms
ms
ms
s
ms
Years
Program/ Erase Operation
Cycle Time
Data Retention
Endurance
10K
—
—
Cycles
Table 45-43. Flash Wait State Versus Operating Frequency
FWS
(Flash Wait State)
0
1
2
3
4
5
6
Maximum Operating Frequency (MHz) @ T° = 85C
VDDCORE = 1.08V VDDIO = 3.0V to 3.6V
16
33
51
67
85
100
—
VDDCORE = 1.2V VDDIO = 3.0V to 3.6V
17
35
52
70
87
105
121