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| 型號(hào)： | HC805P18GRS |
| 英文描述： | 68HC805P18 Technical Data |
| 中文描述： | 68HC805P18技術(shù)數(shù)據(jù) |
| 文件頁數(shù)： | 52/111頁 |
| 文件大小： | 748K |
| 代理商： | HC805P18GRS |
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GENERAL RELEASE SPECIFICATION
MOTOROLA
8-2
EEPROM
MC68HC805P18
Rev. 1.0
8
2
3
4
5
6
7
8
9
10
11
12
13
14
A
16
17
18
19
20
In byte erase mode, only the selected byte is erased. In block mode, a 32-byte
block of EEPROM is erased. The EEPROM memory space is divided into four
32-byte blocks ($140–$15F, $160–$17F, $180–$19F, $1A0–$1BF), and doing
a block erase to any address within a block will erase the entire block. In bulk
erase mode, the entire 128-byte EEPROM section is erased.
LATCH — Latch Bit
When set, LATCH configures the EEPROM address and data bus for
programming. Writes to the EEPROM array cause the data bus and the address
bus to be latched. This bit is readable and writable, but reads from the array are
inhibited if the LATCH bit is set and a write to the EEPROM space has taken
place.
When clear, address and data buses are configured for normal operation. Reset
clears this bit.
EERC — EEPROM RC Oscillator Control
When this bit is set, the EEPROM section uses the internal RC oscillator instead
of the CPU clock. The RC oscillator is shared with the A/D converter, so this bit
should be set by the user when the internal bus frequency is below 1.5 MHz to
guarantee reliable operation of the EEPROM or A/D converter. After setting the
EERC bit, delay a time, t
RCON
, to allow the RC oscillator to stabilize. This bit is
readable and writable. The EERC bit is cleared by reset. The RC oscillator is
disabled while the MCU is in stop mode.
EEPGM — EEPROM Programming Power Enable
EEPGM must be written to enable (or disable) the EEPGM function. When set,
EEPGM turns on the charge pump and enables the programming (or erasing)
power to the EEPROM array. When clear, this power is switched off. This will
enable pulsing of the programming voltage to be controlled internally. This bit
can be read at any time, but can only be written to if LATCH = 1. If LATCH is not
set, then EEPGM cannot be set. LATCH and EEPGM cannot both be set with
one write if LATCH is cleared. EEPGM is cleared automatically when LATCH is
cleared. Reset clears this bit.
Table 8-1. Erase Mode Select
ER1
ER0
Mode
0
0
Program (no Erase)
0
1
Byte Erase
1
0
Block Erase
1
1
Bulk Erase
F
Freescale Semiconductor, Inc.
For More Information On This Product,
Go to: www.freescale.com
n
.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HC80-8.0MHZ | 功能描述:晶體 CRYSTAL 8MHz RoHS:否 制造商:AVX 頻率:26 MHz 容差: 頻率穩(wěn)定性:50 PPM 負(fù)載電容:8 pF 端接類型:SMD/SMT 封裝 / 箱體:1210 (3225 metric) 工作溫度范圍:- 40 C to + 150 C 尺寸:2.5 mm W x 3.2 mm L x 0.85 mm H 封裝:Reel |
| HC80U | 制造商:FOX 制造商全稱:FOX 功能描述:RESISTANCE WELD THRU-HOLE CRYSTAL |
| HC80U-3.6864MHz | 功能描述:晶體 3.6864MHz 20pF RoHS:否 制造商:AVX 頻率:26 MHz 容差: 頻率穩(wěn)定性:50 PPM 負(fù)載電容:8 pF 端接類型:SMD/SMT 封裝 / 箱體:1210 (3225 metric) 工作溫度范圍:- 40 C to + 150 C 尺寸:2.5 mm W x 3.2 mm L x 0.85 mm H 封裝:Reel |
| HC80UW | 制造商:FOX 制造商全稱:FOX 功能描述:RESISTANCE WELD MINIATURE CRYSTAL (GULLWING) |
| HC8-100-R | 功能描述:固定電感器 10uH 9.2A 43.6mOhms RoHS:否 制造商:AVX 電感:10 uH 容差:20 % 最大直流電流:1 A 最大直流電阻:0.075 Ohms 工作溫度范圍:- 40 C to + 85 C 自諧振頻率:38 MHz Q 最小值:40 尺寸:4.45 mm W x 6.6 mm L x 2.92 mm H 屏蔽:Shielded 端接類型:SMD/SMT 封裝 / 箱體:6.6 mm x 4.45 mm |
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