參數(shù)資料
型號： K5A3240YT
廠商： SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述： Multi-Chip Package MEMORY 32M Bit (4Mx8/2Mx16) Dual Bank NOR Flash Memory / 4M(512Kx8/256Kx16) Full CMOS SRAM
中文描述： 多芯片封裝存儲器32兆位（4Mx8/2Mx16）雙銀行NOR閃存/分（512Kx8/256Kx16）全CMOS SRAM的
文件頁數(shù)： 19/45頁
文件大小： 867K
代理商： K5A3240YT
MCP MEMORY
K5A3x40YT(B)C
Revision 0.0
November 2002
- 26 -
Preliminary
RECOMMENDED OPERATING CONDITIONS(Voltage reference to Vss)
Parameter
Symbol
Min
Typ.
Max
Unit
Supply Voltage
VccF , VccS
2.7
3.0
3.3
V
Supply Voltage
Vss
0
V
ABSOLUTE MAXIMUM RATINGS
NOTES:
1. Minimum DC voltage is -0.3V on Input/ Output balls. During transitions, this level may fall to -2.0V for periods <20ns. Maximum DC voltage on
input / output balls is Vcc+0.3V(Max. 3.6V) which, during transitions, may overshoot to Vcc+2.0V for periods <20ns.
2. Minimum DC voltage is -0.3V on RESET and WP/ACC balls. During transitions, this level may fall to -2.0V for periods <20ns. Maximum DC
voltage on RESETandWP/ACC balls are 12.5V which, during transitions, may overshoot to 14.0V for periods <20ns.
3. Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded. Functional operation should be restricted to the conditions
detailed in the operational sections of this data sheet. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
Parameter
Symbol
Rating
Unit
Voltage on any ball relative to Vss
Vcc
VccF , VccS
-0.3 to +3.6
V
RESET
VIN
-0.3 to +12.5
WP/ACC
-0.3 to +12.5
All Other Balls
-0.3 to Vcc+0.3V(Max.3.6V)
Temperature Under Bias
Tbias
-40 to +125
°C
Storage Temperature
Tstg
-65 to +150
°C
Operating Temperature
TA
-40 to +85
°C
DC CHARACTERISTICS
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Com-
mon
Input Leakage Current
ILI
VIN=Vss to Vcc, Vcc=Vccmax
-1.0
-
+1.0
A
Output Leakage Current
ILO
VOUT=Vss to Vcc, Vcc=Vccmax,
OE=VIH
-1.0
-
+1.0
A
Input Low Level
VIL
-0.3
-
0.5
V
Input High Level
VIH
2.2
-
Vcc
+0.3
V
Output Low Level
VOL
IOL= 2.1mA, Vcc = Vccmin
-
0.4
V
Output High Level
VOH
IOH= -1.0mA, Vcc = Vccmin
2.3
-
V
Flash
RESET Input Leakage Current
ILIT
VccF=Vccmax, RESET=12.5V
-
35
A
WP/ACC Input Leakage Current
ILIW
VccF=Vccmax, WP/ACC=12.5V
-
35
A
Active Read Current (1)
ICC1
CEF=VIL, OE=VIH
5MHz
-
14
20
mA
1MHz
-
3
6
Active Write Current (2)
ICC2
CEF=VIL, OE=VIH
-
15
30
mA
Read While Program Current (3)
ICC3
CEF=VIL, OE=VIH
-
25
50
mA
Read While Erase Current (3)
ICC4
CEF=VIL, OE=VIH
-
25
50
mA
Program While Erase Suspend
Current
ICC5
CEF=VIL, OE=VIH
-
15
35
mA
ACC Accelerated Program
Current
IACC
CEF=VIL, OE=VIH
ACC Ball
-
5
10
mA
VccF Ball
-
15
30
Standby Current
ISB1
VccF=Vccmax, CEF=VccF± 0.3V,
RESET=VccF± 0.3V,
WP/ACC=VccF± 0.3V or Vss± 0.3V
-
5
18
A
Standby Curren During Reset
ISB2
VccF=VccFmax, RESET=Vss±0.3V,
WP/ACC=VccF± 0.3V or Vss± 0.3V
-
5
18
A
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