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參數(shù)資料
| 型號： | K5A3240YT |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | Multi-Chip Package MEMORY 32M Bit (4Mx8/2Mx16) Dual Bank NOR Flash Memory / 4M(512Kx8/256Kx16) Full CMOS SRAM |
| 中文描述： | 多芯片封裝存儲器32兆位（4Mx8/2Mx16）雙銀行NOR閃存/分（512Kx8/256Kx16）全CMOS SRAM的 |
| 文件頁數(shù)： | 4/45頁 |
| 文件大?。?/td> | 867K |
| 代理商： | K5A3240YT |
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MCP MEMORY
K5A3x40YT(B)C
Revision 0.0
November 2002
- 12 -
Preliminary
Figure 3. Autoselect Operation
WE
555H/
AAAH
2AAH/
555H
555H/
AAAH
AAH
55H
90H
00H/
01H/
ECH
Manufacturer
Code
Device Code
A20
A0(x16)/*
DQ15
DQ0
F0H
Return to
Read Mode
22A0H
or
22A2H
NOTE: The 3rd Cycle and 4th Cycle address must include the same bank address. Please refer to Table 6 for device code.
(K5A3240Y)
A20
A-1(x8)
00H
02H
Write (Program/Erase) Mode
Flash memory executes its program/erase operations by writing commands into the command register. In order to write the com-
mands to the register, CEF and WE must be low and OE must be high. Addresses are latched on the falling edge of CEF or WE
(whichever occurs last) and the data are latched on the rising edge of CEF or WE (whichever occurs first). The device uses standard
microprocessor write timing.
Program
Flash memory can be programmed in units of a word or a byte. Programming is writing 0's into the memory array by executing the
Internal Program Routine. In order to perform the Internal Program Routine, a four-cycle command sequence is necessary. The first
two cycles are unlock cycles. The third cycle is assigned for the program setup command. In the last cycle, the address of the mem-
ory location and the data to be programmed at that location are written. The device automatically generates adequate program
pulses and verifies the programmed cell margin by the Internal Program Routine. During the execution of the Routine, the system is
not required to provide further controls or timings.
During the Internal Program Routine, commands written to the device will be ignored. Note that a hardware reset during a program
operation will cause data corruption at the corresponding location.
Figure 4. Program Command Sequence
WE
555H/
AAAH
2AAH/
555H
555H/
AAAH
AAH
55H
A0H
Program
Start
DQ15-DQ0
Address
Data
RY/BY
A20
A0(x16)/
A20
A-1(x8)
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| K5A3240YTC-T755 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:Multi-Chip Package MEMORY 32M Bit (4Mx8/2Mx16) Dual Bank NOR Flash Memory / 4M(512Kx8/256Kx16) Full CMOS SRAM |
| K5A3240YTC-T855 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:Multi-Chip Package MEMORY 32M Bit (4Mx8/2Mx16) Dual Bank NOR Flash Memory / 4M(512Kx8/256Kx16) Full CMOS SRAM |
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