參數(shù)資料
型號(hào): K5A3240YT
廠商: SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述: Multi-Chip Package MEMORY 32M Bit (4Mx8/2Mx16) Dual Bank NOR Flash Memory / 4M(512Kx8/256Kx16) Full CMOS SRAM
中文描述: 多芯片封裝存儲(chǔ)器32兆位(4Mx8/2Mx16)雙銀行NOR閃存/分(512Kx8/256Kx16)全CMOS SRAM的
文件頁(yè)數(shù): 3/45頁(yè)
文件大?。?/td> 867K
代理商: K5A3240YT
MCP MEMORY
K5A3x40YT(B)C
Revision 0.0
November 2002
- 11 -
Preliminary
Flash DEVICE OPERATION
Byte/Word Mode
If the BYTEF ball is set at logical "1" , the device is in word mode, DQ0-DQ15 are active. Otherwise the BYTEF ball is set at logical "0"
, the device is in byte mode, DQ0-DQ7 are active. DQ8-DQ14 are in the High-Z state and DQ15 ball is used as an input for the LSB
(A-1) address ball.
Read Mode
Flash memory is controlled by Chip Enable (CEF), Output Enable (OE) and Write Enable (WE). When CEF and OE are low and WE
is high, the data stored at the specified address location,will be the output of the device. The outputs are in high impedance state
whenever CEF or OE is high.
Standby Mode
Flash memory features Stand-by Mode to reduce power consumption. This mode puts the device on hold when the device is dese-
lected by making CEF high (CEF = VIH). Refer to the DC characteristics for more details on stand-by modes.
Output Disable
The device outputs are disabled when OE is High (OE = VIH). The output balls are in high impedance state.
Automatic Sleep Mode
Flash memory features Automatic Sleep Mode to minimize the device power consumption. Since the device typically draws 5
A of
current in Automatic Sleep Mode, this feature plays an extremely important role in battery-powered applications. When addresses
remain steady for tAA+50ns, the device automatically activates the Automatic Sleep Mode. In the sleep mode, output data is latched
and always available to the system. When addresses are changed, the device provides new data without wait time.
Data
Outputs
tAA + 50ns
Data
Auto Sleep Mode
Address
Data
Autoselect Mode
Flash memory offers the Autoselect Mode to identify manufacturer and device type by reading a binary code. The Autoselect Mode
allows programming equipment to automatically match the device to be programmed with its corresponding programming algorithm.
In addition, this mode allows the verification of the status of write protected blocks. The manufacturer and device code can be read
via the command register. The Command Sequence is shown in Table 5 and Figure 3. The autoselect operation of block protect ver-
ification is initiated by first writing two unlock cycle. The third cycle must contain the bank address and autoselect command (90H). If
Block address while (A6, A1, A0) = (0,1,0) is finally asserted on the address ball, it will produce a logical "1" at the device output DQ0
to indicate a write protected block or a logical "0" at the device output DQ0 to indicate a write unprotected block. To terminate the
autoselect operation, write Reset command (F0H) into the command register.
Figure 2. Auto Sleep Mode Operation
相關(guān)PDF資料
PDF描述
K6R1004C1C 256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating).
K6R1004C1C-I 256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating).
K6R1004C1C-I10 256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating).
K6R1004C1C-I12 256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating).
K6R1004C1C-I15 256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating).
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
K5A3240YTC-T755 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:Multi-Chip Package MEMORY 32M Bit (4Mx8/2Mx16) Dual Bank NOR Flash Memory / 4M(512Kx8/256Kx16) Full CMOS SRAM
K5A3240YTC-T855 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:Multi-Chip Package MEMORY 32M Bit (4Mx8/2Mx16) Dual Bank NOR Flash Memory / 4M(512Kx8/256Kx16) Full CMOS SRAM
K5A3280YBC-T755 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:MCP MEMORY
K5A3280YBC-T855 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:MCP MEMORY
K5A3280YTC-T755 制造商:Samsung Electro-Mechanics 功能描述:MCP 32M BIT (4M X 8/2M X 16) DUAL BANK NOR FLASH MEMORY / 8M(1M X 8/512K X 16) FULL CMOS SRAM, PBGA69