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參數(shù)資料
| 型號(hào)： | K5A3240YT |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | Multi-Chip Package MEMORY 32M Bit (4Mx8/2Mx16) Dual Bank NOR Flash Memory / 4M(512Kx8/256Kx16) Full CMOS SRAM |
| 中文描述： | 多芯片封裝存儲(chǔ)器32兆位（4Mx8/2Mx16）雙銀行NOR閃存/分（512Kx8/256Kx16）全CMOS SRAM的 |
| 文件頁數(shù)： | 22/45頁 |
| 文件大?。?/td> | 867K |
| 代理商： | K5A3240YT |
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MCP MEMORY
K5A3x40YT(B)C
Revision 0.0
November 2002
- 29 -
Preliminary
Flash AC CHARACTERISTICS
Write(Erase/Program)Operations
Alternate CEFControlled Writes
NOTES: 1. Not 100% tested.
2.This does not include the preprogramming time.
Parameter
Symbol
70ns
80ns
Unit
Min
Max
Min
Max
Write Cycle Time (1)
tWC
70
-
80
-
ns
Address Setup Time
tAS
0
-
0
-
ns
Address Hold Time
tAH
45
-
45
-
ns
Data Setup Time
tDS
35
-
35
-
ns
Data Hold Time
tDH
0
-
0
-
ns
Output Enable Setup Time (1)
tOES
0
-
0
-
ns
Output Enable
Hold Time
Read (1)
tOEH1
0
-
0
-
ns
Toggle and Data Polling (1)
tOEH2
10
-
10
-
ns
WE Setup Time
tWS
0
-
0
-
ns
WE Hold Time
tWH
0
-
0
-
ns
CEF Pulse Width
tCP
35
-
35
-
ns
CEF Pulse Width High
tCPH
25
-
25
-
ns
Programming Operation
Word
tPGM
14(typ.)
s
Byte
9(typ.)
s
Accelerated Programming Operation
Word
tACCPGM
9(typ.)
s
Byte
7(typ.)
s
Block Erase Operation (2)
tBERS
0.7(typ.)
sec
BYTE Switching Low to Output HIGH-Z
tFLQZ
25
-
25
-
ns
ERASE AND PROGRAM PERFORMANCE
NOTES: 1. 25
°C, Vcc
F = 3.0V 100,000 cycles, typical pattern.
2. System-level overhead is defined as the time required to execute the four bus cycle command necessary to program each byte.
In the preprogramming step of the Internal Erase Routine, all bytes are programmed to 00H before erasure.
Parameter
Limits
Unit
Comments
Min
Typ
Max
Block Erase Time
-
0.7
15
sec
Excludes 00H programming
prior to erasure
Chip Erase Time
-
49
-
sec
Word Programming Time
-
14
330
s
Excludes system-level overhead
Byte Programming Time
-
9
210
s
Excludes system-level overhead
Accelerated Byte/Word
Program Time
Word Mode
-
9
210
s
Excludes system-level overhead
Byte Mode
-
7
150
s
Excludes system-level overhead
Chip Programming Time
Word Mode
-
28
84
sec
Excludes system-level overhead
Byte Mode
-
36
108
sec
Erase/Program Endurance
100,000
-
cycles
Minimum 100,000 cycles guaran-
teed
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| K5A3240YTC-T755 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:Multi-Chip Package MEMORY 32M Bit (4Mx8/2Mx16) Dual Bank NOR Flash Memory / 4M(512Kx8/256Kx16) Full CMOS SRAM |
| K5A3240YTC-T855 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:Multi-Chip Package MEMORY 32M Bit (4Mx8/2Mx16) Dual Bank NOR Flash Memory / 4M(512Kx8/256Kx16) Full CMOS SRAM |
| K5A3280YBC-T755 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:MCP MEMORY |
| K5A3280YBC-T855 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:MCP MEMORY |
| K5A3280YTC-T755 | 制造商:Samsung Electro-Mechanics 功能描述:MCP 32M BIT (4M X 8/2M X 16) DUAL BANK NOR FLASH MEMORY / 8M(1M X 8/512K X 16) FULL CMOS SRAM, PBGA69 |
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