參數(shù)資料
型號: K5A3240YT
廠商: SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述: Multi-Chip Package MEMORY 32M Bit (4Mx8/2Mx16) Dual Bank NOR Flash Memory / 4M(512Kx8/256Kx16) Full CMOS SRAM
中文描述: 多芯片封裝存儲器32兆位(4Mx8/2Mx16)雙銀行NOR閃存/分(512Kx8/256Kx16)全CMOS SRAM的
文件頁數(shù): 8/45頁
文件大?。?/td> 867K
代理商: K5A3240YT
MCP MEMORY
K5A3x40YT(B)C
Revision 0.0
November 2002
- 16 -
Preliminary
Figure 9. Block Group Protection & Unprotection Algorithms
NOTE: All blocks must be protected before unprotect operation is executing.
Block Protect
Algorithm
Set up Block Group
address
Block Group Protect:
Write 60H to Block
Group address with
A6=0,A1=1
A0=0
Wait 150
s
Verify Block Group
Protect:Write 40H to
Block Group address
with A6=0,
A1=1,A0=0
Read from
Block Group address
with A6=0,
A1=1,A0=0
Data=01h?
Protect another
Block Group?
Remove VID
from RESET
Write RESET
command
END
Wait 1
s
First Write
Cycle=60h?
Temporary Block Group
Unprotect Mode
Block Group Unprotect
Write 60H
with
A6=1,A1=1
A0=0
Wait 15ms
Verify Block Group
Unprotect:Write 40H to
Block Group address
with A6=1,
A1=1,A0=0
Read from
Block Group address
with A6=1,
A1=1,A0=0
Data=00h?
Last Block Group
Remove VID
from RESET
Write RESET
command
END
No
Increment
COUNT
=1000?
Device failed
No
Yes
No
Yes
Algorithm
Increment
COUNT
=25?
Device failed
No
Yes
No
All Block Groups
Protected ?
No
Block Group <i>, i= 0
START
COUNT = 1
RESET=VID
Yes
No
verified ?
Block Group
Protection ?
Yes
No
Yes
Set up next Block
Reset
COUNT=1
Block Unprotect
Group address
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