參數(shù)資料
型號： K5A3240YT
廠商： SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述： Multi-Chip Package MEMORY 32M Bit (4Mx8/2Mx16) Dual Bank NOR Flash Memory / 4M(512Kx8/256Kx16) Full CMOS SRAM
中文描述： 多芯片封裝存儲器32兆位（4Mx8/2Mx16）雙銀行NOR閃存/分（512Kx8/256Kx16）全CMOS SRAM的
文件頁數(shù)： 6/45頁
文件大小： 867K
代理商： K5A3240YT
MCP MEMORY
K5A3x40YT(B)C
Revision 0.0
November 2002
- 14 -
Preliminary
WE
555H/
AAAH
2AAH/
555H
555H/
AAAH
AAH
55H
80H
555H/
Block Erase
Start
DQ15-DQ0
AAAH
2AAH/
555H
Block
Address
AAH
55H
30H
RY/BY
WE
DQ15-DQ0
Figure 7. Erase Suspend/Resume Command Sequence
Erase Suspend / Resume
The Erase Suspend command interrupts the Block Erase to read or program data in a block that is not being erased. The Erase Sus-
pend command is only valid during the Block Erase operation including the time window of 50 us. The Erase Suspend command is
not valid while the Chip Erase or the Internal Program Routine sequence is running.
When the Erase Suspend command is written during a Block Erase operation, the device requires a maximum of 20 us to suspend
the erase operation. But, when the Erase Suspend command is written during the block erase time window (50 us) , the device
immediately terminates the block erase time window and suspends the erase operation.
After the erase operation has been suspended, the device is availble for reading or programming data in a block that is not being
erased. The system may also write the autoselect command sequence when the device is in the Erase Suspend mode.
When the Erase Resume command is executed, the Block Erase operation will resume. When the Erase Suspend or Erase Resume
command is executed, the addresses are in Don't Care state.
Figure 6. Block Erase Command Sequence
A20
A0(x16)/
A20
A-1(x8)
A20
A0(x16)/
A20
A-1(x8)
555H/
AAAH
Block
Address
AAH
30H
XXXH
Erase
Resume
XXXH
B0H
30H
Erase
Suspend
Block Erase
Start
Block Erase
Command Sequence
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