參數(shù)資料
型號: K5A3240YT
廠商: SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述: Multi-Chip Package MEMORY 32M Bit (4Mx8/2Mx16) Dual Bank NOR Flash Memory / 4M(512Kx8/256Kx16) Full CMOS SRAM
中文描述: 多芯片封裝存儲器32兆位(4Mx8/2Mx16)雙銀行NOR閃存/分(512Kx8/256Kx16)全CMOS SRAM的
文件頁數(shù): 28/45頁
文件大小: 867K
代理商: K5A3240YT
MCP MEMORY
K5A3x40YT(B)C
Revision 0.0
November 2002
- 34 -
Preliminary
Flash SWITCHING WAVEFORMS
Parameter
Symbol
70ns
80ns
Unit
Min
Max
Min
Max
Chip Enable Access Time
tCE
-
70
-
80
ns
CEF to BYTE Switching Low or High
tELFL/tELFH
-
5
-
5
ns
BYTE Switching Low to Output HIGH-Z
tFLQZ
-
25
-
25
ns
BYTE Switching High to Output Active
tFHQV
-
25
-
25
ns
OE
tFLQZ
CEF
DQ0-DQ7
BYTE
WE
BYTE Timing Diagram for Write Operation
The falling edge of the last WE signal
CEF
BYTE
tHOLD(tAH)
DQ15/A-1
tELFL
Address Input (A-1)
tSET
(tAS)
Word to Byte Timing Diagram for Read Operation
Byte to Word Timing Diagram for Read Operation
Data Output
(DQ0-DQ7)
DQ8-DQ14
Data Output
(DQ8-DQ14)
Data Output
(DQ15)
OE
tFHQV
CEF
DQ0-DQ7
BYTE
DQ15/A-1
tELFH
Data Output
DQ8-DQ14
Address Input
(A-1)
Data Output
(DQ8-DQ14)
(DQ15)
tCE
Data Output
(DQ0-DQ7)
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