參數(shù)資料
型號： uPSD3233
廠商： 意法半導體
英文描述： Flash Programmable System Device with 8032 Microcontroller Core(嵌入高速“8032微控制器核”的Flash型可編程系統(tǒng)器)
中文描述： 閃存可編程系統(tǒng)器件與8032微控制器內(nèi)核（嵌入高速“8032微控制器核”的閃存型可編程系統(tǒng)器）
文件頁數(shù)： 104/164頁
文件大?。?/td> 1133K
代理商： UPSD3233
μ
PSD3200 FAMILY
104/164
DRAFT(Thursday 20 June 2002, 13:15).
Reset Flash.
The Reset Flash instruction con-
sists of one Write cycle (see Table 83). It can also
be optionally preceded by the standard two write
decoding cycles (writing AAh to 555h and 55h to
AAAh). It must be executed after:
– Reading theFlash Protection Statusor FlashID
– An Error condition has occurred (and the device
has set the Error Flag (DQ5) bit to 1) during a
Flash memory Program or Erase cycle.
The Reset Flash instruction puts the Flash memo-
ry back into normal Read mode. If an Error condi-
tion has occurred (and the device has set the Error
Flag (DQ5) bit to 1) the Flash memory is put back
into normal Read mode within 25
μ
s of the Reset
Flash instruction having been issued. The Reset
Flash instruction is ignored when it is issued dur-
ing a Program or Bulk Erase cycle of the Flash
memory. The Reset Flash instruction aborts any
on-going Sector Erase cycle, and returns the
Flash memory to the normal Read mode within
25
μ
s.
Reset (RESET) Signal.
A pulse on Reset (RE-
SET) aborts any cycle that is in progress, and re-
sets the Flash memory to the Read mode. When
the reset occurs during a Program or Erase cycle,
the Flash memory takes up to 25
μ
s to return to
the Read mode. It is recommended that the Reset
(RESET) pulse (except for Power On Reset, as
described on page 130) be at least 25
μ
s so that
the Flash memory is always ready for the MCU to
fetch the bootstrap instructions after the Reset cy-
cle is complete.
SRAM
The SRAM is enabled when SRAM Select (RS0)
from the DPLD is High. SRAM Select (RS0) can
contain up to two product terms, allowing flexible
memory mapping.
The SRAM can be backed up using an external
battery. The external battery should be connected
to Voltage Stand-by (VSTBY, PC2). If you have an
external battery connected to the
μ
PSD3200, the
contents of the SRAM are retained in the event of
a power loss. The contents of the SRAM are re-
tained so long as the battery voltage remains at
2 V or greater. If the supply voltage falls below the
battery voltage, an internal power switch-over to
the battery occurs.
PC4 can be configured as an output that indicates
when power is being drawn fromthe external bat-
tery. Battery-on Indicator (VBATON, PC4) is High
with thesupply voltage falls below the battery volt-
age and the battery on Voltage Stand-by(VSTBY,
PC2) is supplying power to the internal SRAM.
SRAM Select (RS0), Voltage Stand-by (VSTBY,
PC2) and Battery-on Indicator (VBATON, PC4)
are all configured using PSDsoft Express Configu-
ration.
Sector Select and SRAM Select
Sector Select (FS0-FS7, CSBOOT0-CSBOOT3)
and SRAM Select (RS0) are all outputs of the
DPLD. They are setup by writing equations for
them in PSDsoft Express. The following rules ap-
ply to the equations for these signals:
1. Primary Flash memory and secondary Flash
memory Sector Select signals must notbe larg-
er than the physical sector size.
2. Any primary Flash memory sector must not be
mapped in the same memory space as another
Flash memory sector.
3. A secondary Flash memory sector must not be
mapped in the same memory space as another
secondary Flash memory sector.
4. SRAM, I/O, and Peripheral I/O spaces must not
overlap.
5. A secondary Flash memory sector may overlap
a primary Flash memory sector. In case of over-
lap, priority is given to the secondary Flash
memory sector.
6. SRAM, I/O, and Peripheral I/O spaces may
overlap any other memory sector. Priority is giv-
en to the SRAM, I/O, or Peripheral I/O.
Example.
FS0 is valid when the address is in the
range of 8000h to BFFFh, CSBOOT0 isvalid from
8000h to 9FFFh, and RS0 is valid from 8000h to
87FFh. Any address in the range of RS0 always
accesses the SRAM. Any address in the range of
CSBOOT0 greater than 87FFh (and less than
9FFFh) automatically addresses secondary Flash
memory segment 0. Any address greater than
9FFFh accesses the primary Flash memory seg-
ment 0. You can see that half of theprimary Flash
memory segment 0 and one-fourth of secondary
Flash memory segment 0 cannot be accessed in
this example. Also note that an equation that de-
fined FS1 to anywhere in the range of 8000h to
BFFFh would not be valid.
相關(guān)PDF資料
PDF描述
uPSD3234(中文) Flash Programmable System Device with 8032 Microcontroller Core(嵌入高速“8032微控制器核”的Flash型可編程系統(tǒng)器)
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參數(shù)描述
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