參數(shù)資料
型號： EP2C20F256I6N
廠商： ALTERA CORP
元件分類： FPGA
英文描述： FPGA, 1196 CLBS, PBGA256
封裝： LEAD FREE, FBGA-256
文件頁數(shù)： 135/168頁
文件大?。?/td> 2206K
代理商： EP2C20F256I6N
Altera Corporation
2–57
February 2007
Cyclone II Device Handbook, Volume 1
Cyclone II Architecture
I/O Banks
The I/O pins on Cyclone II devices are grouped together into I/O banks
and each bank has a separate power bus. EP2C5 and EP2C8 devices have
four I/O banks (see Figure 2–28), while EP2C15, EP2C20, EP2C35,
EP2C50, and EP2C70 devices have eight I/O banks (see Figure 2–29).
Each device I/O pin is associated with one I/O bank. To accommodate
voltage-referenced I/O standards, each Cyclone II I/O bank has a VREF
bus. Each bank in EP2C5, EP2C8, EP2C15, EP2C20, EP2C35, and EP2C50
devices supports two VREF pins and each bank of EP2C70 supports four
VREF pins. When using the VREF pins, each VREF pin must be properly
connected to the appropriate voltage level. In the event these pins are not
used as VREF pins, they may be used as regular I/O pins.
The top and bottom I/O banks (banks 2 and 4 in EP2C5 and EP2C8
devices and banks 3, 4, 7, and 8 in EP2C15, EP2C20, EP2C35, EP2C50, and
EP2C70 devices) support all I/O standards listed in Table 2–17, except the
PCI/PCI-X I/O standards. The left and right side I/O banks (banks 1 and
3 in EP2C5 and EP2C8 devices and banks 1, 2, 5, and 6 in EP2C15, EP2C20,
EP2C35, EP2C50, and EP2C70 devices) support I/O standards listed in
Table 2–17, except SSTL-18 class II, HSTL-18 class II, and HSTL-15 class II
I/O standards. See Table 2–17 for a complete list of supported I/O
standards.
The top and bottom I/O banks (banks 2 and 4 in EP2C5 and EP2C8
devices and banks 3, 4, 7, and 8 in EP2C15, EP2C20, EP2C35, EP2C50, and
EP2C70 devices) support DDR2 memory up to 167 MHz/333 Mbps and
QDR memory up to 167 MHz/668 Mbps. The left and right side I/O
banks (1 and 3 of EP2C5 and EP2C8 devices and 1, 2, 5, and 6 of EP2C15,
EP2C20, EP2C35, EP2C50, and EP2C70 devices) only support SDR and
DDR SDRAM interfaces. All the I/O banks of the Cyclone II devices
support SDR memory up to 167 MHz/167 Mbps and DDR memory up to
167 MHz/333 Mbps.
1
DDR2 and QDRII interfaces may be implemented in Cyclone II
side banks if the use of class I I/O standard is acceptable.
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
EP2C20F256I8 功能描述:FPGA - 現(xiàn)場可編程門陣列 FPGA - Cyclone II 1172 LABs 152 IOs RoHS:否 制造商:Altera Corporation 系列:Cyclone V E 柵極數(shù)量: 邏輯塊數(shù)量:943 內(nèi)嵌式塊RAM - EBR:1956 kbit 輸入/輸出端數(shù)量:128 最大工作頻率:800 MHz 工作電源電壓:1.1 V 最大工作溫度:+ 70 C 安裝風格:SMD/SMT 封裝 / 箱體:FBGA-256
EP2C20F256I8GA 制造商:Altera Corporation 功能描述:
EP2C20F256I8N 功能描述:FPGA - 現(xiàn)場可編程門陣列 FPGA - Cyclone II 1172 LABs 152 IOs RoHS:否 制造商:Altera Corporation 系列:Cyclone V E 柵極數(shù)量: 邏輯塊數(shù)量:943 內(nèi)嵌式塊RAM - EBR:1956 kbit 輸入/輸出端數(shù)量:128 最大工作頻率:800 MHz 工作電源電壓:1.1 V 最大工作溫度:+ 70 C 安裝風格:SMD/SMT 封裝 / 箱體:FBGA-256
EP2C20F484C6 功能描述:FPGA - 現(xiàn)場可編程門陣列 FPGA - Cyclone II 1172 LABs 315 IOs RoHS:否 制造商:Altera Corporation 系列:Cyclone V E 柵極數(shù)量: 邏輯塊數(shù)量:943 內(nèi)嵌式塊RAM - EBR:1956 kbit 輸入/輸出端數(shù)量:128 最大工作頻率:800 MHz 工作電源電壓:1.1 V 最大工作溫度:+ 70 C 安裝風格:SMD/SMT 封裝 / 箱體:FBGA-256
EP2C20F484C6N 功能描述:FPGA - 現(xiàn)場可編程門陣列 FPGA - Cyclone II 1172 LABs 315 IOs RoHS:否 制造商:Altera Corporation 系列:Cyclone V E 柵極數(shù)量: 邏輯塊數(shù)量:943 內(nèi)嵌式塊RAM - EBR:1956 kbit 輸入/輸出端數(shù)量:128 最大工作頻率:800 MHz 工作電源電壓:1.1 V 最大工作溫度:+ 70 C 安裝風格:SMD/SMT 封裝 / 箱體:FBGA-256
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