參數(shù)資料
型號(hào): MT29F4G08BABWP
元件分類: PROM
英文描述: 512M X 8 FLASH 2.7V PROM, 18 ns, PDSO48
封裝: LEAD FREE, TSOP1-48
文件頁數(shù): 14/57頁
文件大?。?/td> 1057K
代理商: MT29F4G08BABWP
PDF: 09005aef818a56a7 / Source: 09005aef81590bdd
Micron Technology, Inc., reserves the right to change products or specifications without notice.
2gb_nand_m29b__2.fm - Rev. I 1/06 EN
21
2004 Micron Technology, Inc. All rights reserved.
2, 4, 8Gb: x8/x16 Multiplexed NAND Flash Memory
Bus Operation
Power-On AUTO-READ
During power-on, with the PRE pin at VCC, 3V VCC devices automatically transfer the
first page of the memory array to the data register without requiring a command or
address-input sequence. As VCC reaches approximately 2.5V, the internal voltage detec-
tor initiates the power-on AUTO-READ function.
R/B# will stay LOW (tRPRE) while the first page of data is copied into the data register.
See Table 18 on page 41 for the tRPRE value. Once the READ is complete and R/B# goes
HIGH, RE# can be pulsed to output the first page of data.
The PRE function is not supported on extended-temperature devices.
Figure 16:
First Page Power-On AUTO-READ (3V VCC only)
Notes: 1. Verified per device characterization; not 100 percent tested on all devices.
2. The PRE function is not supported on extended-temperature devices.
Figure 17:
AC Waveforms During Power Transitions
≈ 2.5V1
Vcc
CLE
CE#
WE#
ALE
PRE
R/B#
RE#
I/Ox
tRPRE
1st
2nd
3rd
n th
.....
Undefined
WE#
R/B#
WP#
Vcc
10s
HIGH
3V device:
≈ 2.5V
3V device:
≈ 2.5V
Undefined
Don't Care
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MT29F4G08BABWP-ET 功能描述:IC FLASH 4GBIT 48TSOP RoHS:是 類別:集成電路 (IC) >> 存儲(chǔ)器 系列:- 標(biāo)準(zhǔn)包裝:1 系列:- 格式 - 存儲(chǔ)器:RAM 存儲(chǔ)器類型:SDRAM 存儲(chǔ)容量:256M(8Mx32) 速度:143MHz 接口:并聯(lián) 電源電壓:3 V ~ 3.6 V 工作溫度:-40°C ~ 85°C 封裝/外殼:90-VFBGA 供應(yīng)商設(shè)備封裝:90-VFBGA(8x13) 包裝:托盤 其它名稱:Q2841869
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