參數(shù)資料
型號： MT29F4G08BABWP
元件分類： PROM
英文描述： 512M X 8 FLASH 2.7V PROM, 18 ns, PDSO48
封裝： LEAD FREE, TSOP1-48
文件頁數(shù)： 27/57頁
文件大?。?/td> 1057K
代理商： MT29F4G08BABWP
PDF: 09005aef818a56a7 / Source: 09005aef81590bdd
Micron Technology, Inc., reserves the right to change products or specifications without notice.
2gb_nand_m29b__2.fm - Rev. I 1/06 EN
33
2004 Micron Technology, Inc. All rights reserved.
2, 4, 8Gb: x8/x16 Multiplexed NAND Flash Memory
Command Definitions
BLOCK ERASE Operation
BLOCK ERASE 60h-D0h
Erasing occurs at the block level. For example, the MT29F2G08xxB device has 2,048
erase blocks organized as 64 2,112-byte (2,048 + 64 bytes) pages per block. Each block is
132K bytes (128K + 4K bytes). The BLOCK ERASE command operates on one block at a
time. (See Figure 28.)
Three cycles of addresses A[28:18] are required for the x8 device, and three cycles of
addresses [27:17] are required for the x16 device. Although addresses A[17:12] (x8) and
A[16:11] (x16) are loaded, they are a “Don’t Care” and are ignored for BLOCK ERASE
operations. (See Figures 5 and 6 on page 11 for addressing details.)
The actual command sequence is a two-step process. The ERASE SETUP (60h) com-
mand is first written to the command register. Then three cycles of addresses are written
to the device. Next, the ERASE CONFIRM (D0h) command is written to the command
register. At the rising edge of WE#, R/B# goes LOW and the internal write state machine
automatically controls the timing and erase-verify operations. R/B# stays LOW for the
entire tBERS erase time.
The READ STATUS REGISTER command can be used to check the status of the ERASE
operation. When bit 6 = “1” the erase operation is complete. Bit 0 indicates a pass/fail
condition where “0” = pass. (See Figure 28, and Table 9 on page 28.)
Figure 28:
BLOCK ERASE Operation
RE#
CE#
ALE
CLE
I/Ox
60h
Address Input (3 Cycles)
Status
D0h
70h
R/B#
WE#
tBERS
Don‘t Care
I/O 0 = 0 ERASE successful
I/O 0 = 1 ERASE error
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MT29F4G08BABWP-ET 功能描述:IC FLASH 4GBIT 48TSOP RoHS:是 類別:集成電路 (IC) >> 存儲器 系列:- 標(biāo)準(zhǔn)包裝:1 系列:- 格式 - 存儲器:RAM 存儲器類型:SDRAM 存儲容量:256M（8Mx32） 速度:143MHz 接口:并聯(lián) 電源電壓:3 V ~ 3.6 V 工作溫度:-40°C ~ 85°C 封裝/外殼:90-VFBGA 供應(yīng)商設(shè)備封裝:90-VFBGA（8x13） 包裝:托盤 其它名稱:Q2841869
MT29F4G08BABWP-ET TR 功能描述:IC FLASH 4GBIT 48TSOP RoHS:是 類別:集成電路 (IC) >> 存儲器 系列:- 標(biāo)準(zhǔn)包裝:1 系列:- 格式 - 存儲器:RAM 存儲器類型:SDRAM 存儲容量:256M（8Mx32） 速度:143MHz 接口:并聯(lián) 電源電壓:3 V ~ 3.6 V 工作溫度:-40°C ~ 85°C 封裝/外殼:90-VFBGA 供應(yīng)商設(shè)備封裝:90-VFBGA（8x13） 包裝:托盤 其它名稱:Q2841869
MT29F4G08BBBWP 功能描述:IC FLASH 4GBIT 48TSOP RoHS:是 類別:集成電路 (IC) >> 存儲器 系列:- 標(biāo)準(zhǔn)包裝:1 系列:- 格式 - 存儲器:RAM 存儲器類型:SDRAM 存儲容量:256M（8Mx32） 速度:143MHz 接口:并聯(lián) 電源電壓:3 V ~ 3.6 V 工作溫度:-40°C ~ 85°C 封裝/外殼:90-VFBGA 供應(yīng)商設(shè)備封裝:90-VFBGA（8x13） 包裝:托盤 其它名稱:Q2841869
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