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參數(shù)資料
| 型號： | MT29F4G08BABWP |
| 元件分類： | PROM |
| 英文描述： | 512M X 8 FLASH 2.7V PROM, 18 ns, PDSO48 |
| 封裝： | LEAD FREE, TSOP1-48 |
| 文件頁數(shù)： | 2/57頁 |
| 文件大?。?/td> | 1057K |
| 代理商： | MT29F4G08BABWP |
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PDF: 09005aef818a56a7 / Source: 09005aef81590bdd
Micron Technology, Inc., reserves the right to change products or specifications without notice.
2gb_nand_m29b__2.fm - Rev. I 1/06 EN
10
2004 Micron Technology, Inc. All rights reserved.
2, 4, 8Gb: x8/x16 Multiplexed NAND Flash Memory
Architecture
These devices use NAND electrical and command interfaces. Data, commands, and
addresses are multiplexed onto the same pins. This provides a memory device with a
low pin count.
The internal memory array is accessed on a page basis. When doing reads, a page of data
is copied from the memory array into the data register. Once copied to the data register,
data is output sequentially, byte-by-byte on x8 devices, or word-by-word on x16 devices.
The memory array is programmed on a page basis. After the starting address is loaded
into the internal address register, data is sequentially written to the internal data register
up to the end of a page. After all of the page data has been loaded into the data register,
array programming is started.
In order to increase programming bandwidth, this device incorporates a cache register.
In the cache programming mode, data is first copied into the cache register and then
into the data register. Once the data is copied into the data register, programming
begins.
After the data register has been loaded and programming started, the cache register
becomes available for loading additional data. Loading the next page of data into the
cache register takes place while page programming is in process.
The INTERNAL DATA MOVE command also uses the internal cache register. Normally,
moving data from one area of external memory to another uses a large number of exter-
nal memory cycles. By using the internal cache register and data register, array data can
be copied from one page and then programmed into another without using external
memory cycles.
Addressing
NAND Flash devices do not contain dedicated address pins. Addresses are loaded using
Table 2 on page 12 presents address functions internal to the x8 device; Table 3 on
additional memory mapping and addressing details.
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| MT29F4G08BABWP-ET | 功能描述:IC FLASH 4GBIT 48TSOP RoHS:是 類別:集成電路 (IC) >> 存儲器 系列:- 標準包裝:1 系列:- 格式 - 存儲器:RAM 存儲器類型:SDRAM 存儲容量:256M（8Mx32） 速度:143MHz 接口:并聯(lián) 電源電壓:3 V ~ 3.6 V 工作溫度:-40°C ~ 85°C 封裝/外殼:90-VFBGA 供應商設備封裝:90-VFBGA（8x13） 包裝:托盤 其它名稱:Q2841869 |
| MT29F4G08BABWP-ET TR | 功能描述:IC FLASH 4GBIT 48TSOP RoHS:是 類別:集成電路 (IC) >> 存儲器 系列:- 標準包裝:1 系列:- 格式 - 存儲器:RAM 存儲器類型:SDRAM 存儲容量:256M（8Mx32） 速度:143MHz 接口:并聯(lián) 電源電壓:3 V ~ 3.6 V 工作溫度:-40°C ~ 85°C 封裝/外殼:90-VFBGA 供應商設備封裝:90-VFBGA（8x13） 包裝:托盤 其它名稱:Q2841869 |
| MT29F4G08BBBWP | 功能描述:IC FLASH 4GBIT 48TSOP RoHS:是 類別:集成電路 (IC) >> 存儲器 系列:- 標準包裝:1 系列:- 格式 - 存儲器:RAM 存儲器類型:SDRAM 存儲容量:256M（8Mx32） 速度:143MHz 接口:并聯(lián) 電源電壓:3 V ~ 3.6 V 工作溫度:-40°C ~ 85°C 封裝/外殼:90-VFBGA 供應商設備封裝:90-VFBGA（8x13） 包裝:托盤 其它名稱:Q2841869 |
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