參數(shù)資料
型號： MT29F4G08BABWP
元件分類： PROM
英文描述： 512M X 8 FLASH 2.7V PROM, 18 ns, PDSO48
封裝： LEAD FREE, TSOP1-48
文件頁數(shù)： 22/57頁
文件大小： 1057K
代理商： MT29F4G08BABWP
PDF: 09005aef818a56a7 / Source: 09005aef81590bdd
Micron Technology, Inc., reserves the right to change products or specifications without notice.
2gb_nand_m29b__2.fm - Rev. I 1/06 EN
29
2004 Micron Technology, Inc. All rights reserved.
2, 4, 8Gb: x8/x16 Multiplexed NAND Flash Memory
Command Definitions
PROGRAM Operations
PROGRAM PAGE 80h-10h
Micron NAND Flash devices are inherently page-programmed devices. Within a block,
the pages must be programmed consecutively from the least significant bit (LSB) page of
the block to most significant bit (MSB) pages of the block. Random page address pro-
gramming is prohibited.
Micron NAND flash devices also support partial-page programming operations. This
means that any single bit can only be programmed one time before an erase is required;
however, the page can be partitioned such that a maximum of eight programming oper-
ations are allowed before an erase is required.
SERIAL DATA INPUT 80h
PAGE PROGRAM operations require loading the SERIAL DATA INPUT (80h) command
into the command register, followed by five ADDRESS cycles, then the data. Serial data
is loaded on consecutive WE# cycles starting at the given address. The PROGRAM (10h)
command is written after the data input is complete. The internal write state machine
automatically executes the proper algorithm and controls all the necessary timing to
program and verify the operation. Write verification only detects “1s” that are not suc-
cessfully written to “0s.”
R/B# goes LOW for the duration of array programming time, tPROG. The READ STATUS
REGISTER (70h) command and the RESET (FFh) command are the only commands valid
during the programming operation. Bit 6 of the status register will reflect the state of
R/B#. When the device reaches ready, read bit 0 of the status register to determine if the
program operation passed or failed. (See Figure 23.) The command register stays in read
status register mode until another valid command is written to it.
RANDOM DATA INPUT 85h
After the initial data set is input, additional data can be written to a new column address
with the RANDOM DATA INPUT (85h) command. The RANDOM DATA INPUT com-
mand can be used any number of times in the same page prior to issuing the PAGE
WRITE (10h) command. See Figure 24 for the proper command sequence.
Figure 23:
PROGRAM and READ STATUS Operation
Figure 24:
RANDOM DATA INPUT
I/Ox
80h
Address (5 cycles)
10h
70h
R/B#
tPROG
Status
I/O 0 = 0 PROGRAM successful
I/O 0 = 1 PROGRAM error
DIN
I/Ox
80h
Address (5 cycles)
85h
Address (2 cycles)
10h
70h
R/B#
tPROG
DIN
Status
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MT29F4G08BABWP-ET 功能描述:IC FLASH 4GBIT 48TSOP RoHS:是 類別:集成電路 (IC) >> 存儲器 系列:- 標(biāo)準(zhǔn)包裝:1 系列:- 格式 - 存儲器:RAM 存儲器類型:SDRAM 存儲容量:256M（8Mx32） 速度:143MHz 接口:并聯(lián) 電源電壓:3 V ~ 3.6 V 工作溫度:-40°C ~ 85°C 封裝/外殼:90-VFBGA 供應(yīng)商設(shè)備封裝:90-VFBGA（8x13） 包裝:托盤 其它名稱:Q2841869
MT29F4G08BABWP-ET TR 功能描述:IC FLASH 4GBIT 48TSOP RoHS:是 類別:集成電路 (IC) >> 存儲器 系列:- 標(biāo)準(zhǔn)包裝:1 系列:- 格式 - 存儲器:RAM 存儲器類型:SDRAM 存儲容量:256M（8Mx32） 速度:143MHz 接口:并聯(lián) 電源電壓:3 V ~ 3.6 V 工作溫度:-40°C ~ 85°C 封裝/外殼:90-VFBGA 供應(yīng)商設(shè)備封裝:90-VFBGA（8x13） 包裝:托盤 其它名稱:Q2841869
MT29F4G08BBBWP 功能描述:IC FLASH 4GBIT 48TSOP RoHS:是 類別:集成電路 (IC) >> 存儲器 系列:- 標(biāo)準(zhǔn)包裝:1 系列:- 格式 - 存儲器:RAM 存儲器類型:SDRAM 存儲容量:256M（8Mx32） 速度:143MHz 接口:并聯(lián) 電源電壓:3 V ~ 3.6 V 工作溫度:-40°C ~ 85°C 封裝/外殼:90-VFBGA 供應(yīng)商設(shè)備封裝:90-VFBGA（8x13） 包裝:托盤 其它名稱:Q2841869
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