參數(shù)資料
型號： MT29F4G08BABWP
元件分類： PROM
英文描述： 512M X 8 FLASH 2.7V PROM, 18 ns, PDSO48
封裝： LEAD FREE, TSOP1-48
文件頁數(shù)： 31/57頁
文件大?。?/td> 1057K
代理商： MT29F4G08BABWP
PDF: 09005aef818a56a7 / Source: 09005aef81590bdd
Micron Technology, Inc., reserves the right to change products or specifications without notice.
2gb_nand_m29b__2.fm - Rev. I 1/06 EN
37
2004 Micron Technology, Inc. All rights reserved.
2, 4, 8Gb: x8/x16 Multiplexed NAND Flash Memory
Error Management
Micron NAND devices are specified to have a minimum of 2,008 (NVB) valid blocks out
of every 2,048 total available blocks. This means the devices may have blocks that are
invalid when they are shipped. An invalid block is one that contains one or more bad
bits. Additional bad blocks may develop with use. However, the total number of avail-
able blocks will not fall below NVB during the endurance life of the product.
Although NAND memory devices may contain bad blocks, they can be used quite reli-
ably in systems that provide bad-block mapping, replacement, and error correction
algorithms. This type of software environment ensures data integrity.
Internal circuitry isolates each block from other blocks, so the presence of a bad block
does not affect the operation of the rest of the Flash device.
The first block (physical block address 00h) for each CE# in Micron NAND devices is
guaranteed to be free of defects (up to 1,000 PROGRAM/ERASE cycles) when shipped
from the factory. This provides a reliable location for storing boot code and critical boot
information.
Before NAND Flash devices are shipped from Micron, they are erased. The factory iden-
tifies invalid blocks before shipping by programming data other than FFh (x8) or FFFFh
(x16) into the first spare location (column address 2,048 for x8 devices, or 1,024 for x16
devices) of the first or second page of each bad block.
System software should check the first spare address on the first or second page of each
block prior to performing any erase or programming operations on the Flash device. A
bad block table can then be created, allowing system software to map around these
areas. Factory testing is performed under worst-case conditions. Because blocks marked
“bad” may be marginal, it may not be possible to recover this information if the block is
erased.
Over time, some memory locations may fail to program or erase properly. In order to
ensure that data is stored properly over the life of the Flash device, certain precautions
must be taken, such as:
Always check status after a WRITE, ERASE, or DATA MOVE operation.
Use some type of error detection and correction algorithm to recover from single-bit
errors.
Use a bad-block replacement algorithm.
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MT29F4G08BABWP-ET 功能描述:IC FLASH 4GBIT 48TSOP RoHS:是 類別:集成電路 (IC) >> 存儲器 系列:- 標(biāo)準(zhǔn)包裝:1 系列:- 格式 - 存儲器:RAM 存儲器類型:SDRAM 存儲容量:256M（8Mx32） 速度:143MHz 接口:并聯(lián) 電源電壓:3 V ~ 3.6 V 工作溫度:-40°C ~ 85°C 封裝/外殼:90-VFBGA 供應(yīng)商設(shè)備封裝:90-VFBGA（8x13） 包裝:托盤 其它名稱:Q2841869
MT29F4G08BABWP-ET TR 功能描述:IC FLASH 4GBIT 48TSOP RoHS:是 類別:集成電路 (IC) >> 存儲器 系列:- 標(biāo)準(zhǔn)包裝:1 系列:- 格式 - 存儲器:RAM 存儲器類型:SDRAM 存儲容量:256M（8Mx32） 速度:143MHz 接口:并聯(lián) 電源電壓:3 V ~ 3.6 V 工作溫度:-40°C ~ 85°C 封裝/外殼:90-VFBGA 供應(yīng)商設(shè)備封裝:90-VFBGA（8x13） 包裝:托盤 其它名稱:Q2841869
MT29F4G08BBBWP 功能描述:IC FLASH 4GBIT 48TSOP RoHS:是 類別:集成電路 (IC) >> 存儲器 系列:- 標(biāo)準(zhǔn)包裝:1 系列:- 格式 - 存儲器:RAM 存儲器類型:SDRAM 存儲容量:256M（8Mx32） 速度:143MHz 接口:并聯(lián) 電源電壓:3 V ~ 3.6 V 工作溫度:-40°C ~ 85°C 封裝/外殼:90-VFBGA 供應(yīng)商設(shè)備封裝:90-VFBGA（8x13） 包裝:托盤 其它名稱:Q2841869
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