
TSE Transmission Switch Element Datasheet
Released
Proprietary and Confidential to PMC-Sierra, Inc., and for its Customers’ Internal Use
Document ID: PMC-1991258, Issue 7
152
15 Power Information
15.1 Power Requirements
Table 19 Power Requirements
Conditions
Parameter
Typ 1,3
High4
Max2
Units
IDDOP
VDDI
(1.8V)
IDDOP
AVDL
(1.8 V)
IDDOP
VDDO
(3.3 V)
IDDOP
AVDH
(3.3 V)
IDDOP
CSU_AVDH
(3.3 V)
Total Power
2300
-
2540
mA
775
-
962
mA
1.4
-
2.4
mA
837
-
889
mA
42
-
48
mA
all serial links
enabled
8.4
9.2
-
W
Notes:
1. Typical IDD values are calculated as the mean value of current under the following conditions: typically
processed silicon, nominal supply voltage, Tj=60 °C, outputs loaded with 30 pF (if not otherwise specified),
and a normal amount of traffic or signal activity. These values are suitable for evaluating typical device
performance in a system.
2. Max IDD values are currents guaranteed by the production test program and/or characterization over
process for operating currents at the maximum operating voltage and operating temperature that yields the
highest current. Outputs are assumed to be loaded with 30pF (if not otherwise specified).
3. Typical power values are calculated using the formula:
Power =
∑
i(VDDNomi x IDDTypi)
Where i denotes all the various power supplies on the device, VDDNomi is the nominal voltage for supply i,
and IDDTypi is the typical current for supply i (as defined in note 1 above). These values are suitable for
evaluating typical device performance in a system.
4. High power values are a “normal high power” estimate, calculated using the formula:
Power =
∑
i(VDDMaxi x IDDHighi)
Where i denotes all the various power supplies on the device, VDDMaxi is the maximum operating voltage
for supply i, and IDDHighi is the current for supply i. IDDHigh values are calculated as the mean value plus
two sigmas (2
σ
) of measured current under the following conditions: Tj=105° C, outputs loaded with 30 pF (if
not otherwise specified). These values are suitable for evaluating board and device thermal characteristics.