參數(shù)資料
型號: TE28F800C3TD70
廠商: INTEL CORP
元件分類: PROM
英文描述: 512K X 16 FLASH 3V PROM, 70 ns, PDSO48
封裝: 12 X 20 MM, TSOP-48
文件頁數(shù): 21/72頁
文件大?。?/td> 1083K
代理商: TE28F800C3TD70
Intel Advanced+ Boot Block Flash Memory (C3)
May 2005
Intel Advanced+ Boot Block Flash Memory (C3)
Datasheet
28
Order Number: 290645, Revision: 023
Table 11.
Read Operations — 64-Mbit Density
#Sym
Parameter
Density
64 Mbit
Unit
Product
70 ns
80 ns
VCC
2.7 V–3.6 V
Note
Min
Max
Min
Max
R1
tAVAV
Read Cycle Time
3,4
70
80
ns
R2
tAVQV
Address to Output Delay
3,4
70
80
ns
R3
tELQV
CE# to Output Delay
1,3,4
70
80
ns
R4
tGLQV
OE# to Output Delay
1,3,4
20
ns
R5
tPHQV
RP# to Output Delay
3,4
150
ns
R6
tELQX
CE# to Output in Low Z
2,3,4
0
ns
R7
tGLQX
OE# to Output in Low Z
2,3,4
0
ns
R8
tEHQZ
CE# to Output in High Z
2,3,4
20
ns
R9
tGHQZ
OE# to Output in High Z
2,3,4
20
ns
R10
tOH
Output Hold from Address, CE#, or OE#
Change, Whichever Occurs First
2,3,4
0
ns
Notes:
1.OE# may be delayed up to tELQV–tGLQV after the falling edge of CE# without impact on tELQV.
2.Sampled, but not 100% tested.
allowable input slew rate.
Figure 9.
Read Operation Waveform
R5
R10
R7
R6
R9
R4
R8
R3
R1
R2
R1
Address [A]
CE# [E]
OE# [G]
WE# [W]
Data [D/Q]
RST # [P]
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