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參數(shù)資料
| 型號： | TE28F800C3TD70 |
| 廠商： | INTEL CORP |
| 元件分類： | PROM |
| 英文描述： | 512K X 16 FLASH 3V PROM, 70 ns, PDSO48 |
| 封裝： | 12 X 20 MM, TSOP-48 |
| 文件頁數(shù)： | 59/72頁 |
| 文件大?。?/td> | 1083K |
| 代理商： | TE28F800C3TD70 |
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Intel Advanced+ Boot Block Flash Memory (C3)
May 2005
Intel Advanced+ Boot Block Flash Memory (C3)
Datasheet
62
Order Number: 290645, Revision: 023
Appendix C Common Flash Interface
This appendix defines the data structure or “database” returned by the Common Flash Interface
(CFI) Query command. System software should parse this structure to gain critical information
such as block size, density, x8/x16, and electrical specifications. Once this information has been
obtained, the software detects which command sets to use to enable flash writes, block erases, and
otherwise control the flash component. The Query is part of an overall specification for multiple
command set and control interface descriptions called Common Flash Interface, or CFI.
C.1
Query Structure Output
The Query database allows system software to obtain information for controlling the flash device.
This section describes the device’s CFI-compliant interface that allows access to Query data.
Query data are presented on the lowest-order data outputs (DQ0-DQ7) only. The numerical offset
value is the address relative to the maximum bus width supported by the device. On this family of
devices, the Query table device starting address is a 0x10, which is a word address for x16 devices.
For a word-wide (x16) device, the first two Query-structure bytes, ASCII “Q” and “R,” appear on
the low byte at word addresses 0x10 and 0x11. This CFI-compliant device outputs 0x00 data on
upper bytes. The device outputs ASCII “Q” in the low byte (DQ0-DQ7) and 0x00 in the high byte
(DQ8-DQ15).
At Query addresses containing two or more bytes of information, the least-significant data byte is
presented at the lower address, and the most-significant data byte is presented at the higher address.
For tables in this appendix, addresses and data are represented in hexadecimal notation, so the “h”
suffix has been dropped. In addition, since the upper byte of word-wide devices is always “0x00,”
the leading “00” has been dropped from the table notation and only the lower byte value is shown.
Any x16 device outputs can be assumed to have 0x00 on the upper byte in this mode.
Table 27.
Summary of Query Structure Output as a Function of Device and Mode
Device
Hex Offset
Hex Code
ASCII Value
Device Addresses
00010:
51
"Q"
00011:
52
"R"
00012:
59
"Y"
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| TE28F800CEB120 | 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:8-MBIT (512K X 16, 1024K X 8) SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY |
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