參數(shù)資料
型號: TE28F800C3TD70
廠商: INTEL CORP
元件分類: PROM
英文描述: 512K X 16 FLASH 3V PROM, 70 ns, PDSO48
封裝: 12 X 20 MM, TSOP-48
文件頁數(shù): 58/72頁
文件大小: 1083K
代理商: TE28F800C3TD70
Intel Advanced+ Boot Block Flash Memory (C3)
Datasheet
Intel Advanced+ Boot Block Flash Memory (C3)
May 2005
Order Number: 290645, Revision: 023
61
Figure 22.
Protection Register Programming Flowchart
FULL STATUS CHECK PROCEDURE
Program Protection Register operation addresses must be
within the Protection Register address space. Addresses
outside this space will return an error.
Repeat for subsequent programming operations.
Full Status Register check can be done after each program, or
after a sequence of program operations.
Write 0xFF after the last operation to set Read Array state.
SR[3] must be cleared before the Write State Machine will
allow further program attempts.
Only the Clear Staus Register command clears SR[1, 3, 4].
If an error is detected, clear the Status register before
attempting a program retry or other error recovery.
1
0
1
PROTECTION REGISTER PROGRAMMING PROCEDURE
Start
Write 0xC0,
PR Address
Write PR
Address & Data
Read Status
Register
SR[7] =
Full Status
Check
(if desired)
Program
Complete
Read Status
Register Data
Program
Successful
SR[3], SR[4] =
V
PP Range Error
Program Error
Register Locked;
Program Aborted
Idle
Bus
Operation
None
Command
Check SR[1], SR[3], SR[4]:
0,1,1 = V
PP R ange Error
Check SR[1], SR[3], SR[4]:
0,0,1 = Programming Error
Comments
Write
Idle
Program
PR Setup
Protection
Program
None
Data = 0xC0
Addr = First Location to Program
Data = Data to Program
Addr = Location to Program
Check SR[7]:
1 = WSM Ready
0 = WSM Busy
Bus
Operation
Command
Comments
Read
None
Status Register Data. Toggle CE# or
OE# to Update Status Register Data
Idle
None
Check SR[1], SR[3], SR[4]:
1,0,1 = Block locked; operation aborted
(Program Setup)
(Confirm Data)
0
SR[3], SR[4] =
0
SR[3], SR[4] =
1
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