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參數(shù)資料
| 型號： | TE28F800C3TD70 |
| 廠商： | INTEL CORP |
| 元件分類： | PROM |
| 英文描述： | 512K X 16 FLASH 3V PROM, 70 ns, PDSO48 |
| 封裝： | 12 X 20 MM, TSOP-48 |
| 文件頁數(shù)： | 41/72頁 |
| 文件大小： | 1083K |
| 代理商： | TE28F800C3TD70 |
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Intel Advanced+ Boot Block Flash Memory (C3)
May 2005
Intel Advanced+ Boot Block Flash Memory (C3)
Datasheet
46
Order Number: 290645, Revision: 023
Bus operations are defined in Table 20, “Bus Operations” on page 39.
Table 22.
Command Bus Operations
Command
Notes
First Bus Cycle
Second Bus Cycle
Oper
Addr
Data
Oper
Addr
Data
Read Array
1,3
Write
X
0xFF
Read Identifier
1,3
Write
X
0x90
Read
IA
ID
CFI Query
1,3
Write
X
0x98
Read
QA
QD
Read Status Register
1,3
Write
X
0x70
Read
X
SRD
Clear Status Register
1,3
Write
X
0x50
Program
2,3
Write
X
0x40/
0x10
Write
PA
PD
Block Erase/Confirm
1,3
Write
X
0x20
Write
BA
D0H
Program/Erase Suspend
1,3
Write
X
0xB0
Program/Erase Resume
1,3
Write
X
0xD0
Lock Block
1,3
Write
X
0x60
Write
BA
0x01
Unlock Block
1,3
Write
X
0x60
Write
BA
0xD0
Lock-Down Block
1,3
Write
X
0x60
Write
BA
0x2F
Protection Program
1,3
Write
X
0xC0
Write
PA
PD
X = "Don’t Care"
PA = Prog Addr
BA = Block Addr
IA
= Identifier Addr.
QA = Query Addr.
SRD = Status Reg.
Data
PD = Prog Data
ID = Identifier Data
QD = Query Data
Notes:
1.Following the Read Identifier or CFI Query commands, read operations output device identification data or
CFI query information, respectively. See Section 10.1.2 and Section 10.1.3.
2.Either 0x40 or 0x10 command is valid, but the Intel standard is 0x40.
3.When writing commands, the upper data bus [DQ8-DQ15] should be either VIL or VIH, to minimize current
draw.
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