參數(shù)資料
型號: TE28F800C3TD70
廠商: INTEL CORP
元件分類: PROM
英文描述: 512K X 16 FLASH 3V PROM, 70 ns, PDSO48
封裝: 12 X 20 MM, TSOP-48
文件頁數(shù): 72/72頁
文件大小: 1083K
代理商: TE28F800C3TD70
Intel Advanced+ Boot Block Flash Memory (C3)
Datasheet
Intel Advanced+ Boot Block Flash Memory (C3)
May 2005
Order Number: 290645, Revision: 023
9
2.2
Block Diagram
2.3
Memory Map
The Intel Advanced+ Boot Block Flash Memory (C3) device is asymmetrically blocked, which
enables system code and data integration within a single flash device. The bulk of the array is
divided into 32 Kword main blocks that can store code or data, and 4 Kword boot blocks to
facilitate storage of boot code or for frequently changing small parameters. See Table 1, “Top Boot
Figure 1.
C3 Flash Memory Device Block Diagram
Ou
tp
u
t
M
u
lt
ip
le
x
e
r
4-
K
W
o
r
d
Pa
ra
m
e
te
rB
lo
c
k
32
-
K
W
o
rd
Ma
in
B
lo
c
k
32
-
K
W
o
rd
Ma
in
B
lo
c
k
4-
K
W
o
r
d
Pa
ra
m
e
te
rB
lo
c
k
Y-Gating/Sensing
Write State
Machine
Program/Erase
Voltage Switch
Data
Comparator
Status
Register
Identifier
Register
Da
ta
R
e
gi
s
ter
I/O Logic
Address
Latch
Address
Counter
X-Decoder
Y-Decoder
Power
Reduction
Control
Input Buffer
Output Buffer
GND
VCC
VPP
CE#
WE#
OE#
RP#
Command
User
Interface
Input Buffer
DQ
0-DQ15
V
CCQ
WP#
A[MAX:MIN]
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