參數(shù)資料
型號(hào)： TE28F800C3TD70
廠商： INTEL CORP
元件分類： PROM
英文描述： 512K X 16 FLASH 3V PROM, 70 ns, PDSO48
封裝： 12 X 20 MM, TSOP-48
文件頁(yè)數(shù)： 63/72頁(yè)
文件大?。?/td> 1083K
代理商： TE28F800C3TD70
Intel Advanced+ Boot Block Flash Memory (C3)
May 2005
Intel Advanced+ Boot Block Flash Memory (C3)
Datasheet
66
Order Number: 290645, Revision: 023
Table 32.
System Interface Information
C.5
Device Geometry Definition
Table 33.
Device Geometry Definition
Offset
Length
Description
Add.
Hex Code
Value
0x1B
1
VCC logic supply minimum program/erase voltage
bits 0–3 BCD 100 mV
bits 4–7 BCD volts
1B:
--27
2.7 V
0x1C
1
VCC logic supply maximum program/erase voltage
bits 0–3 BCD 100 mV
bits 4–7 BCD volts
1C:
--36
3.6 V
0x1D
1
VPP [programming] supply minimum program/erase voltage
bits 0–3 BCD 100 mV
bits 4–7 HEX volts
1D:
--B4
11.4 V
0x1E
1
VPP [programming] supply maximum program/erase voltage
bits 0–3 BCD 100 mV
bits 4–7 HEX volts
1E:
--C6
12.6 V
0x1F
1
“n” such that typical single word program time-out =2
n s
1F:
--05
32 s
0x20
1
“n” such that typical max. buffer write time-out = 2n s
20:
--00
NA
0x21
1
“n” such that typical block erase time-out = 2
n ms
21:
--0A
1 s
0x22
1
“n” such that typical full chip erase time-out = 2n ms
22:
--00
NA
0x23
1
“n” such that maximum word program time-out = 2
n times typical
23:
--04
512s
0x24
1
“n” such that maximum buffer write time-out = 2n times typical
24:
--00
NA
0x25
1
“n” such that maximum block erase time-out = 2
n times typical
25:
--03
8s
0x26
1
“n” such that maximum chip erase time-out = 2n times typical
26:
--00
NA
Offset
Length
Description
Add.
Hex
Code
Value
0x27
1
“n” such that device size = 2
n in number of bytes
27
0x28
2
Flash device interface:
x8 async
28:00,29:00
x16 async
28:01,29:00
x8/x16 async
28:02,29:00
28:
29:
--01
--00
x16
0x2A
2
“n” such that maximum number of bytes in write buffer = 2
n
2A:
2B:
--00
0
0x2C
1
Number of erase block regions within device:
1. x = 0 means no erase blocking; the device erases in “bulk”
2. x specifies the number of device or partition regions
with one or more contiguous same-size erase blocks.
3. Symmetrically blocked partitions have one blocking region
4. Partition size = (total blocks) x (individual block size)
2C:
--02
2
0x2D
4
Erase Block Region 1 Information
bits 0–15 = y, y+1 = number of identical-size erase blocks
bits 16–31 = z, region erase block(s) size are z x 256 bytes
2D:
2E:
2F:
30:
0x2D
14
Erase Block Region 2 Information
bits 0–15 = y, y+1 = number of identical-size erase blocks
bits 16–31 = z, region erase block(s) size are z x 256 bytes
31:
32:
33:
34:
相關(guān)PDF資料
PDF描述
T101P3TAKE TOGGLE SWITCH, SPDT, LATCHED, 0.02A, 20VDC, THROUGH HOLE-RIGHT ANGLE
T103STKWBE TOGGLE SWITCH, SPDT, LATCHED, 0.02A, 20VDC, PANEL MOUNT-THREADED
T105KHWGE TOGGLE SWITCH, SPDT, MOMENTARY, 2A, 28VDC, PANEL MOUNT-THREADED
T105KTDCGE TOGGLE SWITCH, SPDT, MOMENTARY, 2A, 28VDC, THROUGH HOLE-STRAIGHT
T107MTDAGE TOGGLE SWITCH, SPDT, LATCHED AND MOMENTARY, 2A, 28VDC, THROUGH HOLE-RIGHT ANGLE
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
TE28F800CEB120 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:8-MBIT (512K X 16, 1024K X 8) SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY
TE28F800CET120 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:8-MBIT (512K X 16, 1024K X 8) SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY
TE28F800CV-B60 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:2-MBIT SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY
TE28F800CV-B80 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:2-MBIT SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY
TE28F800CVB90 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:8-MBIT (512K X 16, 1024K X 8) SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。

采購(gòu)需求

(若只采購(gòu)一條型號(hào)，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

*型號(hào) *數(shù)量 廠商 批號(hào) 封裝
添加更多采購(gòu)

我的聯(lián)系方式

*
*
*