參數(shù)資料
型號: TE28F800C3TD70
廠商: INTEL CORP
元件分類: PROM
英文描述: 512K X 16 FLASH 3V PROM, 70 ns, PDSO48
封裝: 12 X 20 MM, TSOP-48
文件頁數(shù): 32/72頁
文件大?。?/td> 1083K
代理商: TE28F800C3TD70
Intel Advanced+ Boot Block Flash Memory (C3)
May 2005
Intel Advanced+ Boot Block Flash Memory (C3)
Datasheet
38
Order Number: 290645, Revision: 023
Transient current magnitudes depend on the device outputs’ capacitive and inductive loading. Two-
line control and proper decoupling capacitor selection will suppress these transient voltage peaks.
Each flash device should have a 0.1 F ceramic capacitor connected between each VCC and GND,
and between its VPP and VSS. These high-frequency, inherently low-inductance capacitors should
be placed as close as possible to the package leads.
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