參數(shù)資料
型號: TE28F800C3TD70
廠商: INTEL CORP
元件分類: PROM
英文描述: 512K X 16 FLASH 3V PROM, 70 ns, PDSO48
封裝: 12 X 20 MM, TSOP-48
文件頁數(shù): 67/72頁
文件大小: 1083K
代理商: TE28F800C3TD70
Intel Advanced+ Boot Block Flash Memory (C3)
Datasheet
Intel Advanced+ Boot Block Flash Memory (C3)
May 2005
Order Number: 290645, Revision: 023
7
1.0
Introduction
This datasheet contains the specifications for the Intel
Advanced+ Boot Block Flash Memory
(C3) device family, hereafter called the C3 flash memory device. These flash memories add
features such as instant block locking and protection registers that can be used to enhance the
security of systems.
1.1
Nomenclature
0x
Hexadecimal prefix
0b
Binary prefix
Byte
8 bits
Word
16 bits
KW or Kword
1024 words
Mword
1,048,576 words
Kb
1024 bits
KB
1024 bytes
Mb
1,048,576 bits
MB
1,048,576 bytes
APS
Automatic Power Savings
CSP
Chip Scale Package
CUI
Command User Interface
OTP
One Time Programmable
PR
Protection Register
PRD
Protection Register Data
PLR
Protection Lock Register
RFU
Reserved for Future Use
SR
Status Register
SRD
Status Register Data
WSM
Write State Machine
1.2
Conventions
The terms pin and signal are often used interchangeably to refer to the external signal connections
on the package; for chip scale package (CSP) the term ball is used.
Group Membership Brackets: Square brackets will be used to designate group membership or to
define a group of signals with similar function (i.e. A[21:1], SR[4:1])
Set: When referring to registers, the term set means the bit is a logical 1.
Clear: When referring to registers, the term clear means the bit is a logical 0.
Block: A group of bits (or words) that erase simultaneously with one block erase instruction.
Main Block: A block that contains 32 Kwords.
Parameter Block: A block that contains 4 Kwords.
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