參數(shù)資料
型號(hào): TE28F800C3TD70
廠商: INTEL CORP
元件分類: PROM
英文描述: 512K X 16 FLASH 3V PROM, 70 ns, PDSO48
封裝: 12 X 20 MM, TSOP-48
文件頁數(shù): 27/72頁
文件大?。?/td> 1083K
代理商: TE28F800C3TD70
Intel Advanced+ Boot Block Flash Memory (C3)
Datasheet
Intel Advanced+ Boot Block Flash Memory (C3)
May 2005
Order Number: 290645, Revision: 023
33
7.3
Erase and Program Timings
Table 16.
Erase and Program Timings
7.4
AC I/O Test Conditions
Note:
Input timing begins, and output timing ends, at VCCQ/2. Input rise and fall times (10% to 90%) < 5 ns.
Worst-case speed conditions are when VCC = VCCMin.
Symbol
Parameter
VPP
1.65 V–3.6 V
11.4 V–12.6 V
Unit
Note
Typ
Max
Typ
Max
tBWPB
4-KW Parameter Block
Word Program Time
1, 2, 3
0.10
0.30
0.03
0.12
s
tBWMB
32-KW Main Block
Word Program Time
1, 2, 3
0.8
2.4
0.24
1
s
tWHQV1 / tEHQV1
Word Program Time for 0.13
and 0.18 Micron Product
1, 2, 3
12
200
8
185
s
Word Program Time for 0.25
Micron Product
1, 2, 3
22
200
8
185
s
tWHQV2 / tEHQV2
4-KW Parameter Block
Erase Time
1, 2, 3
0.5
4
0.4
4
s
tWHQV3 / tEHQV3
32-KW Main Block
Erase Time
1, 2, 3
1
5
0.6
5
s
tWHRH1 / tEHRH1
Program Suspend Latency
1,3
5
10
5
10
s
tWHRH2 / tEHRH2
Erase Suspend Latency
1,3
5
20
5
20
s
Notes:
1.Typical values measured at TA= +25 °C and nominal voltages.
2.Excludes external system-level overhead.
3.Sampled, but not 100% tested.
Figure 11.
AC Input/Output Reference Waveform
V
CCQ
0V
V
CCQ/2
V
CCQ/2
Test Points
Input
Output
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