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參數(shù)資料
| 型號(hào)： | TE28F800C3TD70 |
| 廠商： | INTEL CORP |
| 元件分類： | PROM |
| 英文描述： | 512K X 16 FLASH 3V PROM, 70 ns, PDSO48 |
| 封裝： | 12 X 20 MM, TSOP-48 |
| 文件頁(yè)數(shù)： | 61/72頁(yè) |
| 文件大小： | 1083K |
| 代理商： | TE28F800C3TD70 |
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Intel Advanced+ Boot Block Flash Memory (C3)
May 2005
Intel Advanced+ Boot Block Flash Memory (C3)
Datasheet
64
Order Number: 290645, Revision: 023
C.3
Block Status Register
The Block Status Register indicates whether an erase operation completed successfully or whether
a given block is locked or can be accessed for flash program/erase operations. See Table 30.
Block Erase Status (BSR[1]) allows system software to determine the success of the last block
erase operation. BSR[1] can be used just after power-up to verify that the VCC supply was not
accidentally removed during an erase operation.
Notes:
1.
BA = Block Address beginning location (i.e., 0x08000 is block 1’s beginning location when the block size
is 32K-word).
Table 30.
Block Status Register
Offset
Length
Description
Add.
Value
0x(BA+2)1
1
Block Lock Status Register
BA+2
--00 or --01
BSR[0] Block lock status
0 = Unlocked
1 = Locked
BA+2
(bit 0): 0 or 1
BSR[1] Block lock-down status
0 = Not locked down
1 = Locked down
BA+2
(bit 1): 0 or 1
BSR[7:2]: Reserved for future use
BA+2
(bit 2-7): 0
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