參數(shù)資料
型號(hào): TE28F800C3TD70
廠商: INTEL CORP
元件分類: PROM
英文描述: 512K X 16 FLASH 3V PROM, 70 ns, PDSO48
封裝: 12 X 20 MM, TSOP-48
文件頁(yè)數(shù): 57/72頁(yè)
文件大?。?/td> 1083K
代理商: TE28F800C3TD70
Intel Advanced+ Boot Block Flash Memory (C3)
May 2005
Intel Advanced+ Boot Block Flash Memory (C3)
Datasheet
60
Order Number: 290645, Revision: 023
Figure 21.
Locking Operations Flowchart
No
Start
Write 0x60,
Block Address
Write 0x90
Read Block
Lock Status
Locking
Change?
Lock Change
Complete
Write either
0x01/0xD0/0x2F,
Block Address
Write 0xFF
Any Address
Yes
Write
(Optional)
Read
(Optional)
Idle
(Optional)
Write
Lock
Setup
Lock,
Unlock, or
Lock-Down
Confirm
Read
Device ID
Block Lock
Status
None
Read
Array
Data = 0x60
Addr = Any Address
Data = 0x01 (Block Lock)
0xD0 (Block Unlock)
0x2F (Lock-Down Block)
Addr = Block to lock/unlock/lock-down
Data = 0x90
Addr = Any Address
Block Lock status data
Addr = Block address + offset 2
Confirm locking change on D[1,0] .
Data = 0xFF
Addr = Any address
Bus
Operation
Command
Comments
LOCKING OPERATIONS PROCEDURE
(Lock Confirm)
(Read Device ID)
(Read Array)
O
p
tion
al
(Lock Setup)
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