參數(shù)資料
型號: TE28F800C3TD70
廠商: INTEL CORP
元件分類: PROM
英文描述: 512K X 16 FLASH 3V PROM, 70 ns, PDSO48
封裝: 12 X 20 MM, TSOP-48
文件頁數(shù): 28/72頁
文件大?。?/td> 1083K
代理商: TE28F800C3TD70
Intel Advanced+ Boot Block Flash Memory (C3)
May 2005
Intel Advanced+ Boot Block Flash Memory (C3)
Datasheet
34
Order Number: 290645, Revision: 023
Note:
See Table 17 for component values.
7.5
Device Capacitance
TA = 25 °C, f = 1 MHz
Figure 12.
Transient Equivalent Testing Load Circuit
Device
Under Test
V
CCQ
C
L
R
2
R
1
Out
Table 17.
Test Configuration Component Values for Worst-Case Speed Conditions
Test Configuration
CL (pF)
R1 (k)R2 (k)
VCCQMin Standard Test
50
25
Note:
CL includes jig capacitance.
Table 18.
Device Capacitance
Symbol
Parameter§
Typ
Max
Unit
Condition
CIN
Input Capacitance
6
8
pF
VIN = 0.0 V
COUT
Output Capacitance
8
12
pF
VOUT = 0.0 V
§Sampled, not 100% tested.
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