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參數(shù)資料
| 型號(hào)： | TE28F800C3TD70 |
| 廠商： | INTEL CORP |
| 元件分類： | PROM |
| 英文描述： | 512K X 16 FLASH 3V PROM, 70 ns, PDSO48 |
| 封裝： | 12 X 20 MM, TSOP-48 |
| 文件頁數(shù)： | 49/72頁 |
| 文件大小： | 1083K |
| 代理商： | TE28F800C3TD70 |
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Intel Advanced+ Boot Block Flash Memory (C3)
Datasheet
Intel Advanced+ Boot Block Flash Memory (C3)
May 2005
Order Number: 290645, Revision: 023
53
11.6.1
Program Protection
In addition to the flexible block locking, the VPP programming voltage can be held low for absolute
hardware write protection of all blocks in the flash device. When VPP is below or equal to VPPLK,
any Program or Erase operation will result in an error, prompting the corresponding Status Register
bit (SR[3]) to be set.
0645_06
Note:
1.A resistor can be used if the VCC supply can sink adequate current based on resistor value. See AP-657
Designing with the Advanced+ Boot Block Flash Memory Architecture
for details.
Figure 16.
Example Power Supply Configurations
V
CC
V
PP
12 V Fast Programming
Absolute Write Protection With V
PP ≤
V
PPLK
System Supply
12 V Supply
10
≤ K
V
CC
V
PP
System Supply
12 V Supply
Low Voltage and 12 V Fast Programming
V
CC
V
PP
System Supply
Prot#
(Logic Signal)
V
CC
V
PP
System Supply
Low-Voltage Programming
Absolute Write Protection via Logic Signal
(Note 1)
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