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參數(shù)資料
| 型號(hào)： | K4J52324KI-HC1A0 |
| 元件分類： | DRAM |
| 英文描述： | 512M X 1 DDR DRAM, 0.2 ns, PBGA136 |
| 封裝： | HALOGEN FREE AND ROHS COMPLIANT, FBGA-136 |
| 文件頁數(shù)： | 18/61頁 |
| 文件大?。?/td> | 1364K |
| 代理商： | K4J52324KI-HC1A0 |
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K4J52324KI
datasheet
GDDR3 SGRAM
Rev. 1.2
DESELECT
The DESELECT function (CS high) prevents new commands from being executed by the GDDR3(x32). The GDDR3(x32) SGRAM is effectively dese-
lected. Operations already in progress are not affected.
NO OPERATION (NOP)
The NO OPERATION (NOP) command is used to instruct selected GDDR3(x32) to perform a NOP (CS LOW). This prevents unwanted commands from
being registered during idle or wait states. Operations already in progress are not affected.
LOAD MODE REGISTER
The mode registers are loaded via inputs A0-A11. See mode register descriptions in the Register Definition section. The Load Mode Register command
can only be issued when all banks are idle, and a subsequent executable command cannot be issued until tMRD is met.
ACTIVE
The ACTIVE command is used to open (or activate) a row in a particular bank for a subsequent access. The value on the BA0,BA1, BA2 inputs selects
the bank, and the address provided on inputsA0-A11 selects the row. This row remains active (or open) for accesses until a PRECHARGE command is
issued to that bank. A PRECHARGE command must be issued before opening a different row in the same bank.
READ
The READ command is used to initiate a burst read access to an active row. The value on the BA0, BA1, BA2 inputs selects the bank, and the address
provided on inputs A0-A7, A9 selects the starting column location. The value on input A8 determines whether or not auto precharge is used. If auto pre-
charge is selected, the row being accessed will be precharged at the end of the READ burst; if auto precharge is not selected, the row will remain open for
subsequent accesses.
WRITE
The WRITE command is used to initiate a burst write access to an active row. The value on the BA0, BA1, BA2 inputs selects the bank, and the address
provided on inputs A0-A7, A9 selects the starting column location. The value on inputs A8 determines whether or not auto precharge is used. If auto pre-
charge is selected, the row being accessed will be precharged at the end of the WRITE burst; if auto precharge is not selected, the row will remain open
for subsequent accesses. Input data appearing on the DQs is written to the memory array subject to the DM input logic level appearing coincident with the
data. If a given DM signal is registered LOW. the corresponding data will be written to memory; If the DM signal is registered HIGH, the corresponding
data inputs will be ignored, and a WRITE will not be executed to that byte/column location.
PRECHARGE
The PRECHARGE command is used to deactivate the open row in a particular bank or the open row in all banks. The bank(s) will be available for a sub-
sequent row access a specified time (tRP) after the PRECHARGE command is issued. Input A8 determines whether one or all banks are to be pre-
charged, and in the case where only one banks are to be precharged, inputs BA0,BA1,BA2 select the bank. Otherwise BA0, BA1,BA2 are treated as
"Don’t Care." Once a bank has been precharged, it is in the idle state and must be activated prior to any READ or WRITE command will be treated as a
NOP if there is no open row is already in the process of precharging.
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