SBI Bus Serializer ASSP Telecom Standard Product Data Sheet
Released
Proprietary and Confidential to PMC-Sierra, Inc., and for its customers’ internal use.
Document No.: PMC-2000168, Issue 5
352
16
Power Information
16.1 Power Requirements
Conditions
PM8610 (SBS)
4x19.44MHz
Incoming/Outgoing
interface with Parallel
Tx/Rx interface
Parameter
Typ
1,3
High
4
Max
2
Units
IDDOP (VDDI)
0.199
—
0.233
A
IDDOP (VDDO)
0.063
—
0.103
A
IDDOP (AVDL)
0.078
—
0.123
A
IDDOP (AVDH)
0.009
—
0.019
A
Total Power
0.74
0.93
—
W
IDDOP (VDDI)
0.243
—
0.277
A
IDDOP (VDDO)
0.078
—
0.132
A
IDDOP (AVDL)
0.110
—
0.168
A
IDDOP (AVDH)
0.038
—
0.049
A
PM8610 (SBS)
77.76MHz Incoming
Outgoing interface with
Serial LVDS Tx/Rx
interface
Total Power
1.02
1.28
—
W
Notes:
1. Typical IDD values are calculated as the mean value of current under the following conditions: typically
processed silicon, nominal supply voltage, T
J
=60 °C, outputs loaded with 30 pF (if not otherwise
specified), and a normal amount of traffic or signal activity. These values are suitable for evaluating
typical device performance in a system
2. Max IDD values are currents guaranteed by the production test program and/or characterization over
process for operating currents at the maximum operating voltage and operating temperature that yields
the highest current (including outputs loaded to 30 pF, unless otherwise specified)
3. Typical power values are calculated using the formula:
Power =
∑
i(VDDNomi x IDDTypi)
Where i denotes all the various power supplies on the device, VDDNomi is the nominal voltage for
supply i, and IDDTypi is the typical current for supply i (as defined in note 1 above). These values are
suitable for evaluating typical device performance in a system
4. High power values are a “normal high power” estimate and are calculated using the formula:
Power =
∑
i(VDDMaxi x IDDHighi)
Where i denotes all the various power supplies on the device, VDDMaxi is the maximum operating
voltage for supply i, and IDDHighi is the current for supply i. IDDHigh values are calculated as the
mean value plus two sigmas (2
σ
) of measured current under the following conditions: T
J
=105° C,
outputs loaded with 30 pF (if not otherwise specified). These values are suitable for evaluating board
and device thermal characteristics
16.2 Power Sequencing
Due to ESD protection structures in the SBS pads it is necessary to exercise caution when
powering the IC up or down. ESD protection devices behave as diodes between power supply
pins and from I/O pins to power supply pins. Under extreme conditions, incorrect power
sequencing may damage these ESD protection devices or trigger latch up.
The recommended power supply sequencing is as follows: