參數(shù)資料
型號(hào)： KM416RD4C
廠商： SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述： Direct Rambus DRAM(Direct Rambus 動(dòng)態(tài)RAM)
中文描述： 直接Rambus公司的DRAM（動(dòng)態(tài)內(nèi)存直接Rambus公司）
文件頁(yè)數(shù)： 25/59頁(yè)
文件大小： 4654K
代理商： KM416RD4C
Page 26
KM416RD4C/KM418RD4C
Direct RDRAM
Revision 0.7 September 1998
TARGET
The second bubble type t
CBUB2
is inserted (as a NOCOP
command) by the controller between a WR and RD
command on the COL pins when there is a WR-WR-RD
sequence to the same device. This bubble enables write data
to be retired from the write buffer without being lost, and is
explained in detail in Figure Figure. There would be no
bubble if address c0 and address d0 were directed to
different devices. This bubble appears on the DQA and DQB
pins as t
DBUB2
between a write data dualoct D and read data
dualoct Q. This bubble also appears on the ROW pins as
t
RBUB2
.
Figure 21 : Interleaved Read Transaction with Two Dualoct Data Length
CTM/CFM
DQA8..0
DQB8..0
COL4
..COL0
ROW2
..ROW0
T
0
T
4
T
8
T
12
T
1
T
5
T
9
T
13
T
2
T
6
T
10
T
14
T
3
T
7
T
11
T
15
T
16
T
20
T
24
T
28
T
17
T
21
T
25
T
29
T
18
T
22
T
26
T
30
T
19
T
23
T
27
T
31
T
32
T
36
T
40
T
44
T
33
T
37
T
41
T
45
T
34
T
38
T
42
T
46
T
35
T
39
T
43
T
47
ACT a0
PREX b3
RD c2
RD c1
RD b1
RD b2
PREX a3
ACT b0
ACT c0
ACT d0
ACT e0
RD a1
RD a2
PREX z3
RD d1
ACT f0
RDd2
PREX c3
RD e1
RD e2
PREX d3
RD z1
RD z2
PREX y3
Q (b2)
Q (b1)
Q (a2)
Q (a1)
Q (c1)
Q (c2)
Q (d1)
Q (z2)
Q (z1)
Q (x2)
Q (y1)
Q (y2)
t
RCD
t
CAC
Transaction e can use the
same bank as transaction a
t
RC
t
RR
f3 = {Da,Ba+2}
Transaction f: RD
f0 = {Da,Ba+2,Rf}
f1 = {Da,Ba+2,Cf1}
f2= {Da,Ba+2,Cf2}
e3 = {Da,Ba}
Transaction e: RD
e0 = {Da,Ba,Re}
e1 = {Da,Ba,Ce1}
e2= {Da,Ba,Ce2}
d3 = {Da,Ba+6}
Transaction d: RD
d0 = {Da,Ba+6,Rd}
d1 = {Da,Ba+6,Cd1}
d2= {Da,Ba+6,Cd2}
c3 = {Da,Ba+4}
Transaction c: RD
c0 = {Da,Ba+4,Rc}
c1 = {Da,Ba+4,Cc1}
c2= {Da,Ba+4,Cc2}
b3 = {Da,Ba+2}
Transaction b: RD
b0 = {Da,Ba+2,Rb}
b1 = {Da,Ba+2,Cb1}
b2= {Da,Ba+2,Cb2}
a3 = {Da,Ba}
Transaction a: RD
a0 = {Da,Ba,Ra}
a1 = {Da,Ba,Ca1}
a2= {Da,Ba,Ca2}
z3 = {Da,Ba+6}
Transaction z: RD
z0 = {Da,Ba+6,Rz}
z1 = {Da,Ba+6,Cz1}
z2= {Da,Ba+6,Cz2}
y3 = {Da,Ba+4}
Transaction y: RD
y0 = {Da,Ba+4,Ry}
y1 = {Da,Ba+4,Cy1}
y2= {Da,Ba+4,Cy2}
Figure 22 : Interleaved RRWW Sequence with Two Dualoct Data Length
CTM/CFM
DQA8..0
DQB8..0
COL4
..COL0
ROW2
..ROW0
T
0
T
4
T
8
T
12
T
1
T
5
T
9
T
13
T
2
T
6
T
10
T
14
T
3
T
7
T
11
T
15
T
16
T
20
T
24
T
28
T
17
T
21
T
25
T
29
T
18
T
22
T
26
T
30
T
19
T
23
T
27
T
31
T
32
T
36
T
40
T
44
T
33
T
37
T
41
T
45
T
34
T
38
T
42
T
46
T
35
T
39
T
43
T
47
ACT a0
MSK (b2)
WRA c2
MSK (b1)
WR c1
WR b1
MSK (y2)
WRA b2
PREX a3
D (b2)
D (b1)
ACT b0
ACT c0
ACT d0
ACT e0
RD a1
RD a2
PREX z3
Q (a2)
Q (a1)
MSK (c1)
D (c1)
NOCOP
MSK (c2)
RDd0
D (c2)
t
RBUB1
RDf1
Q (z2)
Q (z1)
D (y2)
RD z1
RD z2
t
CBUB1
t
DBUB1
t
DBUB1
t
DBUB2
t
CBUB2
t
RBUB2
t
CBUB2
NOCOP
Transaction e can use the
same bank as transaction a
f3 = {Da,Ba+2}
Transaction f: WR
f0 = {Da,Ba+2,Rf}
f1 = {Da,Ba+2,Cf1}
f2= {Da,Ba+2,Cf2}
e3 = {Da,Ba}
Transaction e: RD
e0 = {Da,Ba,Re}
e1 = {Da,Ba,Ce1}
e2= {Da,Ba,Ce2}
d3 = {Da,Ba+6}
Transaction d: RD
d0 = {Da,Ba+6,Rd}
d1 = {Da,Ba+6,Cd1}
d2= {Da,Ba+6,Cd2}
c3 = {Da,Ba+4}
Transaction c: WR
c0 = {Da,Ba+4,Rc}
c1 = {Da,Ba+4,Cc1}
c2= {Da,Ba+4,Cc2}
b3 = {Da,Ba+2}
Transaction b: WR
b0 = {Da,Ba+2,Rb}
b1 = {Da,Ba+2,Cb1}
b2= {Da,Ba+2,Cb2}
a3 = {Da,Ba}
Transaction a: RD
a0 = {Da,Ba,Ra}
a1 = {Da,Ba,Ca1}
a2= {Da,Ba,Ca2}
z3 = {Da,Ba+6}
Transaction z: RD
z0 = {Da,Ba+6,Rz}
z1 = {Da,Ba+6,Cz1}
z2= {Da,Ba+6,Cz2}
y3 = {Da,Ba+4}
Transaction y: WR
y0 = {Da,Ba+4,Ry}
y1 = {Da,Ba+4,Cy1}
y2= {Da,Ba+4,Cy2}
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