參數(shù)資料
型號(hào): KM416RD4C
廠商: SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述: Direct Rambus DRAM(Direct Rambus 動(dòng)態(tài)RAM)
中文描述: 直接Rambus公司的DRAM(動(dòng)態(tài)內(nèi)存直接Rambus公司)
文件頁數(shù): 31/59頁
文件大小: 4654K
代理商: KM416RD4C
Page 32
KM416RD4C/KM418RD4C
Direct RDRAM
Revision 0.7 September 1998
TARGET
04c
16
TCYCLE
TCYCLE
read-write, 14 bits
t
CYCLE
datasheet parameter. Specifies cycle time in 64ps units.
04b
16-
TEST75
TEST75
read-write, 16 bits
Test register. Do not read or write after SIO reset.
04d
16-
TEST77
TEST77
read-write, 16 bits
Test register. Write with zero after SIO reset.
04e
16-
TEST78
TEST78
read-write, 16 bits
Test register. Do not read or write after SIO reset.
04f
16-
TEST79
TEST79
read-write, 16 bits
Test register. Do not read or write after SIO reset.
080
16
- 0ff
16
reserved
reserved
vendor-specific
Vendor-specific test registers. Do not read or write after SIO reset.
Table 16 : Control Register Summary
SA11..SA0
Register
Field
read-write/ read-only
Description
相關(guān)PDF資料
PDF描述
KM416S1021CT-G7 512K x 16Bit x 2 Banks Synchronous DRAM with SSTL interface
KM416S1021CT-G8 512K x 16Bit x 2 Banks Synchronous DRAM with SSTL interface
KM416S1021CT-GS 512K x 16Bit x 2 Banks Synchronous DRAM with SSTL interface
KM416S1120D 512K x 16bit x 2 Banks Synchronous DRAM LVTTL
KM416S16230A 4M x 16Bit x 4 Banks Synchronous DRAM(4M x 16位 x4組同步動(dòng)態(tài)RAM)
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
KM416RD4D 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128/144Mbit RDRAM 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM
KM416RD8AC 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128/144Mbit RDRAM 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM
KM416RD8AC(D)-RK70 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128/144Mbit RDRAM 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM
KM416RD8AC(D)-RK80 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128/144Mbit RDRAM 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM
KM416RD8AC(DB)-RCG60 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128/144Mbit RDRAM 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM